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1993 Fiscal Year Final Research Report Summary

Control of resonant electron capture in semiconductor quantum structures

Research Project

Project/Area Number 04452085
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionThe University of Tokyo

Principal Investigator

SHIRAKI Yasuhiro  The University of Tokyo, Research Center for Advanced Science and Technology, Professor, 先端科学技術研究センター, 教授 (00206286)

Co-Investigator(Kenkyū-buntansha) FUKATSU Susumu  The University of Tokyo, Research Center for Advanced Science and Technology, As, 先端科学技術研究センター, 助手 (60199164)
Project Period (FY) 1992 – 1993
Keywordsresonant capture / heterointerface / tunnel barrier / electron-wave reflectivity
Research Abstract

The resonant carrier capture in AlGaAs/GaAs QW structures was systematically investigated by both steady-state and time-resolved photoluminescence. The new structure of QWs with AlAs tunnel barriers was proposed to enhance the resonant effect. It has been clearly revealed that the electron capture efficiency is increased and the electron capture time is decreased due to the resonant electron capture. It has been also found that the insertion of tunnel barriers at QW heterointerfaces drastically leads to resonance enhancement. We demonstrate an optical analogy of the resonant carrier capture, in terms of electron wave reflectivity, on the basis of the effective mass approximation, which well explains the experimental results.
Importantly, the resonant electron capture is expected to be more prominent in low-dimensional quantum structures such as quantum well wires and quantum well boxes. In this sense, the present work will be a cornerstone for future work rying to shed lights on carrier capture in these sophisticated quantum structures. We believe that the control of the resonant electron capture will be regarded as a key issue so that we can tailor the carrier collection efficiency in such low-dimensional structures.

  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] A.Fujiwara et al.: "Control of electron capture in AlGaAs/GaAs quantum wells with tunnel barriers at heterointerfaces"" Proceedings of the 20th International Symosimu on Gallium Arsenide and Relatd Compounds(Inst.Phys.(IOP)Conf.Ser.). (in press). (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Muraki et al.: "Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells" Workbook of 6th International Confevence on Modulated Semiconductor Structures(MSS-6). 974-977 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Ogasawara et al.: ""Well-width dependence of photoluminescence excitation spectra in GaAs-Al_xGa_1-_xAs quantum well"" Physical Review. B42. 9562-9565 (1990)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Fujiwara et a.: ""Observation of resonant electron capture in AlGaAs/GaAs quantum well structures" Surface Science. 263. 642-645 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Fujiwara et al.: ""Resonant electron capture in AlGaAs/GaAs quantum well structures"" Inst.Phys.(IOP)Conf.Ser.No.127 Chapter 5. 195 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Fujiwara et al.: ""Control of electron capture in AlGaAs/GaAs quantum wells with tunnel barriers at heterointerfaces"" Inst.Phys.(IOP)Conf.Ser.(in press). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Muraki et al.: ""Enhancement of free-to-bound transitions due to resonant electron capture in Be-doped AlGaAs/GaAs quantum wells"" Solid State Electronics. (in press). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Fukatsu et al.: ""Exciton diffusion and carrier collection in strained Si_<1-x>Ge_x/Si quantum wells"" Extended Abstracts of the International Conference on Solid State Devices and Materials, (Makuhari). 901-903 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Fukatsu et al.: ""Time-of-flight measurement of carrier transport and carrier collection in strained Si_<1-x>Ge_x/Si quantum wells"" Journal of Vacuum Science and Technology. B12 (to be published). (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1995-03-27  

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