• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

1993 Fiscal Year Final Research Report Summary

Study on Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface and Structure of Interface between Ultra-thin Metal Film and Ultra-thin Silicon Oxide Film

Research Project

Project/Area Number 04452096
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials
Research InstitutionMusashi Institute of Technology

Principal Investigator

HATTORI Takeo  Musashi Inst.of Technol., Professor, 工学部, 教授 (10061516)

Co-Investigator(Kenkyū-buntansha) NOHIRA Hiroshi  Musashi Inst.of Technol., Assistant, 工学部, 助手 (30241110)
AKIYA Masahiro  Musashi Inst.of Technol., Associate Professor, 工学部, 助教授 (60231833)
Project Period (FY) 1992 – 1993
KeywordsHydrogen termination / silicon / initial oxidation / oxidation mechanism / interface structure / layr by layr growth / interface reaction / oxidation reaction
Research Abstract

In order to form high quality silicon oxide and SiO_2/Si interface in atomic scale, it is important to prepare ultra-clean and atomically flat Si surface. Namely, in the case of Si(111) surface it can be realized by the treatment in 40% NH_4F solution, while in the case of Si(100) surface it can be realized by the epitaxial growth of Si in hydrogen gas at 1100゚C.In either case Si surface is terminated with hydrogen and is atomically flat. Because hydrogen-terminated Si surface is chemically stable, the passivation of Si surface with native oxide is expected to be replaced by that with hydrogen. In the present study initial stage of oxidation of atomically flat hydrogen-terminated Si(111) in 1 Torr dry oxygen at 300゚C was studied in details by X-ray photoelectron spectroscopy. By comparing this experimtal results with simulated results of oxidation process, it was found that the oxidation proceeds non-uniformly and layr by layr growth of oxide proceeds locally. However, if the oxidation is performed in 1 Torr dry oxygen at 600 and 800゚C through 0.5 nm thick oxide formed in 1 Torr dry oxygen at 300゚C, the periodic changes in interface structure appeared with the progress of oxidation. This can be understood by the layr by layr growth of thermal oxide. These results can be understood such that below the critical thickness of 0.5-0.8 nm oxidation proceeds non-uniformly, while above this critical thickness the atomic steps at the interface flow uniformly to result in layr by layr growth of thermal oxide. In order to confirm this important discovery, only a little time could be spent for the formation of metal /Si interface and the measurement of valence band spectra of this system. By the way it was found from the study on the initial stage of oxidation in 1 Torr dry oxygen at 200, 300 and 400゚C that the oxidation proceeds more uniformly at lower oxidation temperature.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] T.Hattori,H.Nohira,Y.Tamura and H.Ogawa: "Initial Stage of SiO_2/Si Interface Formation on Si(111)Surface" Japanese Journal of Applied Physics. 31. L638-L641 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ogawa and T.Hattori: "Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces" IEICE Transactions on Electronics. E75-C. 774-780 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Terada et al.: "Optical absorption in ultrathin silicon oxide films near the SiO_2/Si interface" Physical Review B. 46. 2312-2318 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Ogawa and T.Hattori: "Detection of Si-H bonds in silicon oxide by X-ray photoelectron spectrum difference" Applied Physics Letters. 61. 577-579 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi et al.: "Initial oxidation of MBE-grown Si(100)surfaces" Surface Science. 275. 395-400 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hattori: "High resolution x-ray photoemission spectroscopy of thin SiO_2 and Si/SiO_2 interfaces" Journal of Vacuum Science and Technology B. 11. 1528-1532 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Hattori, H.Nohira, Y.Tamura and H.Ogawa: "Initial Stage of SiO_2/Si Interface Formation on Si(111) Surface" Jpn. J.Appl. Phys.32-5. pp. L638-L641 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Nohira, Y.Tamura, H.Ogawa and T.Hattori: "Initial Stage of SiO_2/Si Interface Formation on Si(111) Surface" IEICE Trans. Electron.E75-C-7. pp. 757-763 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ogawa and T.Hattori: "Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surface" IEICE Trans. Electron.E75-C-7. pp. 774-780 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Terada, T.Haga, N.Miyata, K,Moriki, M.Fujisawa, M.Morita, T.Ohmi and T.Hattori: "Optical absorption in ultrathin silicon oxide films near the SiO_2/Si interface" Phys. Rev.B46-4. pp. 2312-2318 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ogawa and T.Hattori: "Detection of Si-H bonds in silicon oxide by x-ray photoelectron spectrum difference" Appl. Phys. Lett.61-5. pp. 577-579 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Yaguchi, K.Fujita, O.Fukatsu, Y.Shiraki, R.Ito and T.Hattori: "Initial oxidation of MBE-grown Si(100) surfaces" Surf. Sci.275. pp. 395-400 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Yasutake, Y.Ejiri and T.Hattori: "Modification of Silicon Surface Using Atomic Force Microscopy with Conducting Probe" Jpn. J.Appl. Phys.32-7B. pp. L1021-L1023 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Hattori: "High resolution x-ray photoemission spectroscopy studies of thin SiO_2 and Si/SiO_2 interfaces" J.Vac. Sci. Technol.B11-4. pp. 1528-1532 (1993)

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 1995-03-27  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi