1993 Fiscal Year Final Research Report Summary
Estimation of ultra precision machined surface by Scanning Near-field Optical Microscope
| Project/Area Number |
04452130
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
機械工作・生産工学
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| Research Institution | Osaka University |
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Principal Investigator |
KATOAOKA Toshihiko OSAKA UNIVERSITY, ENGINEERING, PROFESSOR, 工学部, 教授 (50029328)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAUCHI Kazuto OSAKA UNIVERSITY, ENGINEERING, ASSISTANT PROFESSOR, 工学部, 助教授 (10174575)
ENDO Katsuyoshi OSAKA UNIVERSITY, ENGINEERING, ASSISTANT PROFESSOR, 工学部, 助教授 (90152008)
MORI Yuzo OSAKA UNIVERSITY, ENGINEERING, PROFESSOR, 工学部, 教授 (00029125)
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| Project Period (FY) |
1992 – 1993
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| Keywords | scanning near-field optical microscope / near-field / surface roughness / piezo actuator / laser / surface of insulator / ultra precision machined surface / near field |
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| Research Abstract |
The probe of this scanning near-field optical microscope (SNOM) is a dielectric sphere of 500nm in diameter on a transparent substrate. The probe sphere is illuminated by evanescent wave which is formed by the incidence of He-Ne laser with the wave length of 632.8nm from the inside of the substrate on the condition of total reflection. The light from the probe is collected by a conventional microscope through the substrate. The detected light intensity changes remarkably when a sample is brought in a near-field around the probe. The variation of detected light intensity in the near-field depends on refractive index of sample ; the amaller real part of refractive index of sample, the more remarkable increase of detected light intensity. This result is explained by using an electric dipole model for the elctromagnetic interaction between probe and sample. The vertical resolution of about 2nm and lateral resolution of less than 10nm are obtained for the developed microscope by measuring a standard specimen which is prepared by vacuum evaporation of metal.
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