1994 Fiscal Year Final Research Report Summary
RESEARCH ON NEW QUANTUM FUNCTIONAL MATERIALS BY SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES
| Project/Area Number |
04452174
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | NAGOYA UNIVERSITY |
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Principal Investigator |
TAKEDA Yoshikazu NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,PROFESSOR, 工学部, 教授 (20111932)
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| Co-Investigator(Kenkyū-buntansha) |
OYANAGI Hiroyuki ELECTROTECHNICAL LABORATORY,EXOTIC MATERIALS RESEARCH LABORATORY,LABORATORY HEAD, 電気基礎部, 室長
TABUCHI Masao NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,ASSISTANT PROF, 工学部, 助手 (90222124)
FIJIWARA Yasufumi NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,ASSOCIATE PROF, 工学部, 助教授 (10181421)
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| Project Period (FY) |
1992 – 1994
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| Keywords | SENICONDUCTORS / INSULATORS / METALS / HYBRID STRUCTURES / QUANTUM FUNCTIONS / OMVPE / FLUORESCENCE EXAFS / INITIAL GROWTH PROCESS |
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| Research Abstract |
To realize such a hybrid structure as smiconductor/insulator/metal for a new quantum functional materials, conventional growth techniques are of no use. The hetero-interface must be controlled to one monolayr accuracy. We have developed a new reactor structure in OMVPE system with 4 barrells where intermixing of source gases are avoided and different gases are introduced to each barrell. Substrate travels rotationally or in a back-and forth mode. To test the basic capability of the new growth system, InP,GaAs, GaP,InGaAs and AlGap were grown and a high quality of each epitaxial layr was confirmed. Strained-layr superlattices of InP/InAs/InP where different group-V source gases are required to change without intermixing with each other were successfully grown.
Fluorescence-detected EXAFS for one monolayr, or less, of InAs in InP were successfully conducted with multiple SSDs and highly focused SOR X-rays, and local structures around As atoms in InP were revealed. The lattice relaxation processes were simulated by Valence-Force Field model and a very slow process was clarified.
X-ray CTR scattering technique was successfully applied to one momolyer or 1/10 of momolayr of InAs in InP and the profiles of As distributions in InP were clearly revealed to an atomic level accuracy. Exchange processes of the group-V stoms at the hetero-interfaces were investigated by this technique.
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