1993 Fiscal Year Final Research Report Summary
Synthesis and Characterization of High Pure Diamaond Single Crystal
| Project/Area Number |
04453067
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学・無機材料工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
FUKUNAGA Osamu Tokyo Institute of Technology, Faculty of Engineering, Profesor, 工学部, 教授 (20199251)
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| Co-Investigator(Kenkyū-buntansha) |
KANZAKI Masami Tokyo Institute of Technology, Faculty of Engineering, Research Associate, 工学部, 助手 (90234153)
HIRONAKA Seiichiro Tokyo Institute of Technology, Faculty of Engineering, Associate Profesor, 工学部, 助教授 (00016552)
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| Project Period (FY) |
1992 – 1993
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| Keywords | Diamond / Single crystal / High pressure solvent method / Alloy solvents / Detection of liquidus temperature by DTA / Impurities in diamond / Calculation of impurity state in diamond |
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| Research Abstract |
This project was performed to establish basic scope of the synthwsis of high pure diamond single crystal. High pressure solvent growth method of single crystal diamond, which only possible method at present, was studied from basic view points. We examined various pressure-temperature region of diamond formation of the carbon alloy systems and found that some alloys such as Ni-Ti and Fe-B showed the region which no spontaneous nucleation of diamond was observed. The finding of these region canpropose better P-T condition to perform crystal growth only selectively on the surface of seed crystal.
We developed piston cylinder type and cubic anvil type high pressure apparatus to establish DTA method to detect liquidus temperature under pressure for various carbon and solvent alloy system. Thirdly, we Thirdly, we examined Ni-Ti sovent as a typical system, because Ti has two opposed function namely agent to prevent nitrogen contamination to the diamond lattice and possible souce to supply TiC and TiN into diamond bulk as an inclusion. It was found that high purity diamond crystal can be grown in the solvent of an optimum amount of Ti.
Impurities of light elements inthe diamond lattice could be detected by SIMS and possibly AES and these measurements can also corelate with molecular orbital energy calculation done for the case of Ni impurity.
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