1993 Fiscal Year Annual Research Report

超LSIの完全ドライ・トータル低温製造ラインシステムの試作研究

Research Project

Project/Area Number	04505002
Research Institution	Tohoku University
Principal Investigator	大見忠弘東北大学, 工学部, 教授 (20016463)
Co-Investigator(Kenkyū-buntansha)	森田瑞穂東北大学, 大学院・情報科学研究科, 助教授 (50157905) 柴田直東北大学, 工学部, 助教授 (00187402)
Keywords	ドライプロセス / 低温プロセス / 超LSI / 半導体製造装置 / イオン注入 / 静電気障害 / MOSFET / ゲート酸化
Research Abstract	前年度の装置技術を主体とした基礎開発に続き、本年度は製造ライントータルシステムとしてのさらなる性能向上の研究、各製造プロセス低温化の研究、さらにデバイス試作によるドライ、トータル低温製造プロセスの有効性の検証等を行った。まず、本システムの基本となる乾燥N_2ガス中、もしくは減圧雰囲気下でのウェハ搬送では、静電気発生によるパーティクルの付着やデバイスの破壊が大きな問題となっているが、軟X線及び真空紫外線を用いた新たな除電技術の開発によりこれを解決した。金属の発塵や、電磁ノイズの発生を一切伴わない、極めて迅速で且つクリーンな除電技術を実現した。高性能微細デバイス実現の鍵は、精密なドーパントプロファイルの制御であるが、低エネルギイオンプロセスにおける精密プラズマ制御技術により、任意のキャリヤプロファイルを半導体基板中につくり出すことに成功した。これは、高性能極微細デバイスの製作に非常に有効な技術である。さらに、450℃アニールでイオン注入層を再結晶化させ、10^<-8>A/cm^2という低リーク電流の接合を形成することにも成功した。さらに、これまで最大の難関であったゲート酸化膜形成も、イオンアシスト酸化により、450℃という超低温での成長に成功した。このように全てのプロセスを450℃以下で行うトータル低温化プロセスをドライプロセスで確立したのである。さらにこれらのプロセスを用いて実際にMOSFETを試作し、その可能性を実証した。

Research Products

(16 results)

All Other

All Publications (16 results)

[Publications] T.Ohmi: "ULSI Reliability Through Ultraclean Processing" Proc.IEEE. 81. 716-729 (1993)
[Publications] T.Ohmi: "New Technique for the Measurement of Adsorbed Moisture Concentration on a Solid Surface" Rev.Sci.Instrum.64. 2683-2686 (1993)
[Publications] Y.Maeda: "High-Selectivity and High-Deposition Rate Tungsten CVD Freed chamber Cleaning" J.Electrochem.Soc.141. 566-591 (1994)
[Publications] H.Uetake: "Proposal for Equipment Standardization by Dual-Frequency-Excitation Plasma Processing" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 591-593 (1993)
[Publications] K.Ino: "In situ Chamber Cleaning Using Halo-genated-Gas Plasmas Evaluated by Plasma-Parameter Extraction" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 588-590 (1993)
[Publications] K.Ino: "In situ Chamber Cleaning Using Halo-genated-Gas Plasmas Evaluated by Plasma-Parameter Analysis" Extended Abstracts,184th Electrochemical Society Meeting,New Orleans. 539-540 (1993)
[Publications] M.Hirayama: "Low-Temperature Silicon Epitaxy by Precisely Controlled Plasma Processing" Proceedings,International Workshop on Process and Devices of Scaled LSI's,Seoul.152-157 (1993)
[Publications] M.Hirayama: "Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 210-212 (1993)
[Publications] M.Morita: "Characterization and Control of Native Oxide on Silicon" Japan.J.Apply.Phys. 33. 370-374 (1994)
[Publications] H.Goto: "Dual Excitation Reactive Ion Etcher for Low Energy Plasma Processing" J.Vac.Science and Technology A. 10. 3048-3054 (1992)
[Publications] H.Goto: "A proposed Magnetically Enhanced Reactive Ion Etcher for ULSI" IEEE Trans.Semiconductor Manufacturing. 5. 337-346 (1992)
[Publications] H.Goto: "Independent Control of Ion Density and Ion Bombardment Energy in a Dual RF Excitation Plasma" IEEE Trans.Semiconductor Manufacturing. 6. 58-64 (1993)
[Publications] Y.Kawai: "Ultra-low-Temperature growth of high-integrity gate oxide films by low-energy ion-assisted oxidation" Appl.Phys.Lett.(印刷中).
[Publications] T.Ohmi: "The Technology of Chromium Oxide Passivation on Stainless Steel Surface" J.Electrochem.Soc. 140. 1691-1699 (1993)
[Publications] S.Takahashi: "Corrosion-resistant and non-catalytic properties of Cr_2O_3 surface treatment for specialty gases" Proceedings Microcontamination 93 Conference,San Jose,Sept.1993. 596-605 (1993)
[Publications] W.Shindo: "Low Temperature Silicon Epitaxy Technology Using a Low-Energy Ion Bombardment Process" Proc.International Conference on Advanced Microelectronic Devices and Processing,March 3-5. 441-444 (1994)

1993 Fiscal Year Annual Research Report

超LSIの完全ドライ・トータル低温製造ラインシステムの試作研究

Principal Investigator

大見 忠弘 東北大学, 工学部, 教授 (20016463)

Research Products

[Publications] T.Ohmi: "ULSI Reliability Through Ultraclean Processing" Proc.IEEE. 81. 716-729 (1993)

[Publications] T.Ohmi: "New Technique for the Measurement of Adsorbed Moisture Concentration on a Solid Surface" Rev.Sci.Instrum.64. 2683-2686 (1993)

[Publications] Y.Maeda: "High-Selectivity and High-Deposition Rate Tungsten CVD Freed chamber Cleaning" J.Electrochem.Soc.141. 566-591 (1994)

[Publications] H.Uetake: "Proposal for Equipment Standardization by Dual-Frequency-Excitation Plasma Processing" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 591-593 (1993)

[Publications] K.Ino: "In situ Chamber Cleaning Using Halo-genated-Gas Plasmas Evaluated by Plasma-Parameter Extraction" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 588-590 (1993)

[Publications] K.Ino: "In situ Chamber Cleaning Using Halo-genated-Gas Plasmas Evaluated by Plasma-Parameter Analysis" Extended Abstracts,184th Electrochemical Society Meeting,New Orleans. 539-540 (1993)

[Publications] M.Hirayama: "Low-Temperature Silicon Epitaxy by Precisely Controlled Plasma Processing" Proceedings,International Workshop on Process and Devices of Scaled LSI's,Seoul.152-157 (1993)

[Publications] M.Hirayama: "Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy" Extended Abstracts,1993 International Conference on Solid State Devices and Materials,Chiba. 210-212 (1993)

[Publications] M.Morita: "Characterization and Control of Native Oxide on Silicon" Japan.J.Apply.Phys. 33. 370-374 (1994)

[Publications] H.Goto: "Dual Excitation Reactive Ion Etcher for Low Energy Plasma Processing" J.Vac.Science and Technology A. 10. 3048-3054 (1992)

[Publications] H.Goto: "A proposed Magnetically Enhanced Reactive Ion Etcher for ULSI" IEEE Trans.Semiconductor Manufacturing. 5. 337-346 (1992)

[Publications] H.Goto: "Independent Control of Ion Density and Ion Bombardment Energy in a Dual RF Excitation Plasma" IEEE Trans.Semiconductor Manufacturing. 6. 58-64 (1993)

[Publications] Y.Kawai: "Ultra-low-Temperature growth of high-integrity gate oxide films by low-energy ion-assisted oxidation" Appl.Phys.Lett.(印刷中).

[Publications] T.Ohmi: "The Technology of Chromium Oxide Passivation on Stainless Steel Surface" J.Electrochem.Soc. 140. 1691-1699 (1993)

[Publications] S.Takahashi: "Corrosion-resistant and non-catalytic properties of Cr_2O_3 surface treatment for specialty gases" Proceedings Microcontamination 93 Conference,San Jose,Sept.1993. 596-605 (1993)

[Publications] W.Shindo: "Low Temperature Silicon Epitaxy Technology Using a Low-Energy Ion Bombardment Process" Proc.International Conference on Advanced Microelectronic Devices and Processing,March 3-5. 441-444 (1994)

大見忠弘東北大学, 工学部, 教授 (20016463)