1994 Fiscal Year Final Research Report Summary
Development of High Energy Resolution. Hard X-ray Detectors
| Project/Area Number |
04554006
|
|---|
| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
核・宇宙線・素粒子
|
|---|
| Research Institution | Graduate School of Science, University of Tokyo |
|---|
Principal Investigator |
KAMAE Tuneyoshi Graduate School of Science, University of Tokyo, 大学院・理学系研究科, 教授 (90011618)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
IKEDA Hirokazu National Laboratory for High Energy Physics, 助教授 (10132680)
TAKAHASHI Tadayuki Graduate School of Science, University of Tokyo, 大学院・理学系研究科, 助手 (50183851)
|
|---|
| Project Period (FY) |
1992 – 1994
|
| Keywords | gamma-ray astronomy / ASTRO-E / radiation measurement / inorganic scintillator / pulse discrimination / YAP / GSO / BGO |
|---|
| Research Abstract |
We have developed high sensitivity, high energy resolution hard X-ray/soft gamma-ray detectors for a wide range of applications. In the energy band where NaI (Tl) has benn used (100keV-1MeV), we developed two new inorganic scintillators (GSO and YAP) with Hitachi Chemical (GSO) and Inst. of Nuclear Physics, Minsk, Belarus (YAP) to practically applicable levels. In the lower energy band (10keV-100keV), we developed thick PIN photodiodes (0.5-1.5mm).
These two technologies have been combined in the well-type phoswich counter with PIN diodes proposed for astronomical hard X-ray detection. The detectors has been adopted as an instrument on board a Japanese satellite project Astro-E.
The final products have given the following characteristics.
GSO, Energy resolution - 7.0%(fwhm)at 662keV
YAP, Energy resolution - 5.8% at 662keV
light yield-35% of NaI(Tl)at 552keV
Si PIN Photodiode Depletion thickness - 1.5mm
Energy resolution <3.0keV
We then worked on a pulse shape discriminator optimized for our well-type phowich counter. A proto-type circuit was made on a bread-board and tested successfully and the design has been put into an ASIC design of LSI.In the final year of the project, we produce a prototype chip. We are now in the second round designing stage.
|
