1993 Fiscal Year Final Research Report Summary
Crystal Growth of Widegap Semiconductor SiC with High-Purity and Application to Power Devices
| Project/Area Number |
04555068
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子材料工学
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
MATSUNAMI Hiroyuki Kyoto Univ., Dept.Eng., Professor, 工学部, 教授 (50026035)
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| Co-Investigator(Kenkyū-buntansha) |
KIMOTO Tsunenobu Kyoto Univ., Dept.Eng., Research Associate, 工学部, 助手 (80225078)
YOSHIMOTO Masahiro Kyoto Univ., Dept.Eng., Research Associate, 工学部, 助手 (20210776)
FUYUKI Takashi Kyoto Univ., Dept.Eng., Associate Professor, 工学部, 助教授 (10165459)
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| Project Period (FY) |
1992 – 1993
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| Keywords | Silicon Carbide / Power Device / Vapor Phase Epitaxy / Growth Mechanism / Thermal Oxidation / pn Junction Diode / Schottky Barrier Diode / Schottky障壁ダイオード |
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| Research Abstract |
Homoepitaxial growth of high-quality SiC could be achieved at low temperatures of 1100-3333*, by utilizing step-flow growth on off-oriented SiC{0001} substrates. Growth mechanism such as surface diffusion and nucleation was quantitatively analyzed.
Conduction control of grown layrs was successfully performed in the range of 10^<15>-10^<20>cm^<-3> through in-situ doping. Thermal oxidation, reactive ion etching (RIE), and ion implantation techniques of SiC were established.
A pn junction diode fabricated through successive growth of n- and p-type layrs had a breakdown voltage of 480V.A high breakdown field of 3x10^6V/cm was obtained. Au/SiC Schottky barrier diodes showed excellent characteristics, such as a high blocking voltage over 1.1kV and a low on-resistance of 8x10^<-3>OMEGAcm^2, which is lower than theoretical limits of Si Schottky rectifiers by more than one order of magnitude. The present study demonstrates the great potential of SiC power devices.
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