1993 Fiscal Year Final Research Report Summary
EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS BY ELECTROCHEMICAL DEPOSITIONS
| Project/Area Number |
04650021
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials
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| Research Institution | TOTTORI UNIVERSITY |
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Principal Investigator |
MATSUURA Koichi TOTTORIUNIVERSITY・FACULTYO OF ENGINEERING ASSOCIATE PROFESSOR, 工学部, 助教授 (70029122)
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| Project Period (FY) |
1992 – 1993
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| Keywords | Compound Semiconductors / ZnSe / ZnS / Electrodeposition / Single Crystal Growth / Eitaxal Growth / Light Emitting Diode / Amorphous |
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| Research Abstract |
1 Growth of ZnSe Single Crystals by Sublimation Method
It has been found that ZnSe single crystals grow easily by attaching a capillary at the end of a necked-ampule. ZnSe single cyrstal of 11x11x10mm^2 was gron using the ampoules. The FWHM of X-ray rocking curves on the (400) of the crystal is 14 arcsec, and the crysta has high quality and is able to be used substrates of epitaxial growth.
2 Growth of cubic ZuS Single Crystals
BY the use of I_2-transport Method, cubic-ZnS single crystals were grown and their weight is up to 2.9g. It has been found that the temperature dependence of the free exciton energy Eis expressed by the equation, E=3.8044-9.0x10^<-4>T^2/(T+450.8).
3 Electrochemical Deposition of ZnSe
(1) Electrochemical depositions of ZnSe ere made on the cathodic electrodes of Ti metal or n-ZnSe single crystal in Se aqueous solution and Zn-NTA or Zn-EDTA aqueous soutions. It has been found that ZnSe are deposited electrochemically in potential more negative than the reduction potential of Zn^<2+>.
(2) The ZnSe films deposited on Ti electrodes are amorphous.
(3) Diodes emitting blue light at room temperature were made by electrodeposition of ZnSe on n-ZnSe single crystals. The deposited films may be grown epitaxially.
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