1993 Fiscal Year Final Research Report Summary
Development of Tool Material used New Temary Boride Crystal
| Project/Area Number |
04650118
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
機械工作
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| Research Institution | Kanagawa University |
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Principal Investigator |
KUDOU Kunio Kanagawa Univ., Factly of Engineering, Coadjutor, 工学部, 助手 (10102229)
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| Co-Investigator(Kenkyū-buntansha) |
OKADA Shigeru Kanagawa Univ., Factly of Engineering, Coadjutor, 工学部, 助手 (40191952)
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| Project Period (FY) |
1992 – 1993
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| Keywords | Si doped Al_3C_2B_<48> type crystal / Unite cell dimension / Vickers maicrohardness / Electrical resistivity / Oxidation / Hot press / Sinterring / Tool wear |
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| Research Abstract |
It is purpose of this study that it shall try to development of a new sintering tools for the cutting make use of Si doped Al_3C_2B_<48> type crystals. This crystal is formed with the crystal structure of the B_<12> icosahedoron, and we try to growing Si doped Al_3C_2B_<48> type crystals obtained from metal flux method under an argon atmosphere. The outline of study are as follows ;
1)The optimum conditions of Si doped Al_3C_2B_<48> type crystals.
Tool material is necessary consider that it have a suitable performance efficiency to the hardness and resistance to oxidation in air of crystals. It was preparation of Si doped Al_3C_2B_<48> type crystals. On the results, the optimum conditions for growing Si doped Al_3C_2B_<48> type crystals were the atomic ratios of starting materials (B/Al=0.10, C/B=0.056, Si/B=0.004), the soaking temperature(1450ﾟC)and the soaking time(10 hrs), cooling rate(20ﾟC/h). The crystallographical and the physical properties for the crystals obtained were measureme
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nts, and it was printed(Journal of the Society of Materials Science, JAPAN, Vol.43 No.FEB.1994).
2)Cutting experiments and sintering of Si doped Al_3C_2B_<48> type crystals.
The choice of sintering binders was necessary to the sintering of Si doped Al_3C_2B_<48> type crystals. The results of the reaction between metals and Al_3C_2B_<48> type crystals were run in various metal binder, and Al_3C_2B_<48> type crystals responds of the metals. The sintering condition of hot press is run in the vacuum(10^<-4>mmHg)at sintering temperature 1900ﾟC, pressure 60Mpa, keeping time 1 hour and various combination ratios of Si doped Al_3C_2B_<48> type crystals and B_4C powder of starting materials, and the compacts carries out in the mixing ratios of 5-50%. Sintering tools were determined an cutting examination on high Si-content aluminium alloy. The tools used cemented carbide tool K seed, sintering tool of Si doped Al_3C_2B_<48> type crystals and diamond tool. It makes possibility wity the tool material of Si doped Al_3C_2B_<48> type crystals seemed from tool wear and surface roughness of each tool. The details will be reported at a later date. Less
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