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1993 Fiscal Year Final Research Report Summary

Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave Mode

Research Project

Project/Area Number 04805028
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionHokkaido University

Principal Investigator

AKAZAWA Masamichi  Hokkaido University, Faculty of Engineering, Research Associate, 工学部, 助手 (30212400)

Co-Investigator(Kenkyū-buntansha) SAITOH Toshiya  Hokkaido University, Research Center for Interface Quantum Electronics, Lecturer, 量子界面エレクトロニクス研究センター, 講師 (70241396)
HASEGAWA Hideki  Hokkaido University, Faculty of Engineering, Professor and Hokkaido University,, 工学部, 教授 (60001781)
FUKUI Takashi  Hokkaido University, Research Center for Interface Quantum Electronics, Professo, 量子界面エレクトロニクス研究センター, 教授 (30240641)
Project Period (FY) 1992 – 1993
Keywordssolid state TWA / GaAs / InGaAs / Inp / Interface State / MIS structure
Research Abstract

The semiconductor carrier waves and their traveling wave interactions with the electromagnetic fields in InP and GaAs layrs using the metal-insulator-semiconductor (MIS)-type carrier confinement structure were studied. Traveling wave amplifier (TWA)-type devices were made and the admittance of the devices was measured. For the first time, the existence of carrier waves was observed from the drift velocity dependence of the admittance and two modes of interaction were observed from the frequency dependence of the drift velocity, which gave the reduction peaks of the conductance. To discuss their behavior, TM analysis using superposition of various space harmonics in terms of the modified effective permittivity for the drift plasma is presented. In the model, nonuniformity of the carrier distributions is considered. This model gives fairly good agreement between the experiments and theory. Moreover, the influence of the interface states on the interactions is studied theoretically. It is indicated that parasitic admittance due to a high interface state density cancels out negative conductance. But, when the interface state density is decreased to below 2x10^<11>cm^<-2>eV^<-1>, it is predicted that net negative conductance will be observed.
On the other hand, In GaAs lattice matched to InP is promising material for advanced MMICs, with its high electron mobility. In the MIS structure, excellent characteristics of In GaAs is fully derived. Applying our original Si ICL technique to insulator - In GaAs interface, interface state density was reduced as low as 1x10^<11>cm^<-2>eV^<-1>. It is clear that InGaAs MIS structure is promising for the solid state TWA, which is key device in advanced MMICs.

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] M.Akazawa,H.Hasegawa,H.Tomozawa and H.Fujikura: "Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity at GaAs-AlAs Heterointerface Taking Account of Delta-Doping" Jpn.J.Appl.Phys.Vol.31. L1012-L1014 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Akazawa,H.Hasegawa,H.Tomozawa and H.Fujikura: "Investigation of valence band offset modification at GaAs-AlAs and InGaAs-InAlAs heterointerfaces by a Si interlayer" Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October). 253-256 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kodama,M.Akazawa,H.Fujikura and H.Hasegawa: "Interface Profile Optimization in Novel Surface Passivation Scheme for InGaAs Nanostures Using Si Interface Control Layer" Journal of Electronic Materials. Vol.22. 289-295 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Suzuki,Y.G.Xie,T.Sawada and H.Hasegawa: "Application of Sillicon Interface Control Layer Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs" Proc.of 1st Int.Symp.Control of Scmiconductor Interfaces(Karuizawa,Japan). to be published.(1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Kodama and H.Hasegawa: "Control of Sillicon Nitride-In_<0.53> Ga_<0.47> As Interface by Ultrahin Sillicon Interface Control Layer" Proc.of 1st Int.Symp.Control of Scmiconductor Interfaces(Karuizawa,Japan). to be published.(1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Akazawa, H.Hasegawa, H.Tomozawa and H.Fujikura: ""Reappraisal of Si-Interlayr-Induced Change of Band Discontinuity at GaAs-AlAs Heterointerface Taking Account of Delta-Doping"" Japanese Journal of Applied Physics. Vol.31, Part2, No.8. L1012-L1014 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Akazawa, H.Hasegawa, H.Tomozawa and H.Fujikura: ""Investigation of Valence Band Offset Modification at GaAs-AlAs and InGaAs - InAlAs Heterointerfaces by a Si Interlayr"" Proc.of 19th Int.Symp. GaAs and Related Compounds (Karuizawa, Japan, September28 - October 2, 1992). 253-256 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kodama, M.Akazawa, H.Fujikura and H.Hasegawa: ""Interface Profile Pptimization in Novel Surface Passivation Scheme for InGaAs Nanostructures Using Si Interface Control Layr"" Journal of Electronic Materials. Vo.22, No.3. 289-295 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Suzuki, Y.G.Xie, T.Sawada and H.Hasegawa: ""Application of Silicon Interface Control Layr Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs"" Proc.of 1st Int.Symp.Control of Semiconductor Interfaces (Karuizawa, Japan, November 8-12, 1993). (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Kodama and H.Hasegawa: ""Control of Silicon Nitride-In_<0.53>Ga_<0.47>As Interface by Ultrathin Silicon Interface Control Layr"" Proc.of 1st Int.Symp.Control of Semiconductor Interfaces (Karuizawa, Japan, November 8-12, 1993). (to be published).

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1995-03-27  

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