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1993 Fiscal Year Final Research Report Summary

Selectivity inversion in plasma processing at low temperatures

Research Project

Project/Area Number 04805029
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子材料工学
Research InstitutionTohoku University

Principal Investigator

MATSUURA Takashi  Tohoku University, Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 (60181690)

Co-Investigator(Kenkyū-buntansha) ONO Shoichi  Tohoku University, Research Institute of Electrical Communication, Professor, 電気通信研究所, 教授 (00005232)
OHMI Tadahiro  Tohoku University, Facultly of Engineering, Professor, 工学部, 教授 (20016463)
MUROTA Junichi  Tohoku University, Research Institute of Electrical Communication, Assistant Pro, 電気通信研究所, 助教授 (70182144)
Project Period (FY) 1992 – 1993
KeywordsECR Plasma / Selectivity / Plasma CVD / Etching / Epitaxy / Adsorption & Reaction / Radical / Ion Irradiation
Research Abstract

Plasma processing at low temperatures becomes more and more important with advancement in ultrafine pattern device fabrication technology for silicon LSTs. The present investigators have developed ultraclean processing along with precise control of ion energy in order to realize ideal intrinsic reactions between materials and plasmas.
In this project, we studied on plasma processing at low temperatures without substrate heating, focusing on selectivity in surface adsorption and reaction, and found a selectivity inversion between deposition and etching. We also clarified that this is due to a competitive contribution of ion irradiation induced deposition and radical etching chemistry. Also, we studied on anisotropy control and plasma transport within an ultrafine spacing under highly selective condition, and clarified basic process such that anisotropic etching features are obtained at an effective ion etching yield less than 1, that the lateral etch rate of polysilicon increases linearly with carrier concentration and the vertical one shows square root dependence, and that the radical transport in overetching is described by a flow equation in the molecular flow regime. Futhermore, we achieved self-limited atomic layr etching by adsorption of reactive gas atoms without disturbance by contaminant gases as well as by alternate irradiation of low energy ions. This can be regarded as a final selective processing, because the reaction occurs only at the adsorbed site and not at the non-adsorbed site.
The success of this project supplies a key to giga-scale integration process technologies, and we continue to study the related subjects.

  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] T.Matsuura,et al.: "Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO_2 using an ultraclean electron cyclotron resonance plasma," Applied Physics Letters. 61. 2908-2910 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura,et al.: "Side etch control of n^+-polysilicon with nitrogen added chlorine plasma," Ext.Abstr.Int.Conf.on Solid State Devices and Materials,. 418-419 (1992)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura,et al.: "Comparison of polysilicon etching between pure and nitrogen added chlorine ECR plasmas," in Highly Selective Dry Etching and Damage Control,ed.by.G.S.Mathad and Y.Horiike,The Electrochemical Society,. PV93-21. 141-148 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura,et al.: "Layer-by-layer etching of Si by self-limited adsorption of chlorine with alternated irradiation of low enrgy Ar^+ ions," Ext.Abstr.Int.Conf.on Solid State Devices and Materials,. 83-85 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura,et al.: "Self-limited layer-by-layer etching of Si by alternated chlorine adsorption and Ar^+ ion irradiation," Applied Physics Letters. 63. 2803-2805 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura,et al.: "Highly selective and atomic layer controlled etching by ultraclean ECR plasmas,(invited)" Proc.Int.Conf.on Advanced Microelectronic Devices and Processing,. 139-146 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 松浦孝 他: "シリコンの自己制限型原子層エッチング" 電子情報通信学会技術報告. SDM93-79. 1-8 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 松浦孝 他: "高清浄ECRプラズマによる完全選択異方性エッチング技術in超高純度ガスの科学 第1分冊第1部第3編第9章" リアライズ社, 12(247-258) (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Matsuura, T.Ohmi, J.Murota, and S.Ono: "Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO_2 using an ultraclean electron cyclotron resonance plasma" Applied Physics Letters. Vol.51, No.2414. 2908-2910 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, J.Murota, T.Ohmi, and S.Ono: "Side etch control of n^+-polysilicon with nitrogen added chlorine plasma" Ext. Abstr. Int. Conf. on Solid State devices and Materials. August 26-28. 418-419 (1992)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, J.Murota, S.Ono, and T.Ohmi: "Comparison of polysilicon etching between pure and nitrogen added chlorine ECR plasma" Highly Selective Dry Etching and Damage Control, ed by G.S.Mathad and Y.Horiike, The Electrochemical Society. 141-148 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Maatsuura, J.Murata, Y.Sawada, and T.Ohmi: "Layr-by-layr etching of Si by self-limited adsorption of chlorine with alternated irradiation of low energy Ar^+ ions" Ext. Abstr. Int. Conf. on Solid State devices and Materials. August 29 - September 1. 83-85 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, J.Murota, Y.Sawada, and T.Ohmi: "Self-limited layr-by-layr etching of Si by alternated chlorine adsorption and Ar^+ ion irradiation" Applied Physics Letters. Vol.63, No.20, 15 November. 2803-2805 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, J.Murota, T.Ohmi, Y.Sawada, and S.Ono: "Highly selective and atomic layr controlled etching by ultraclean ECR plasmas" Proc. Int. Conf. on advanced Microelectronic Devices and Processing. March 3-5 (invited). 139-146 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, J.Murota, K.Suzue, Y.Sawada, and T.Ohmi: "Self-limited atomic layr etching of silicon (in Japanese)" Technical Report of the IEICE. Vol.EDM93-79. 1-8 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Matsuura, T.Ohmi, J.Murota, and S.ono: "Perfectly selective directional etching technology by ultraclean ECR plasma" Surface Science Series. No.2, Chapter 9, Realize Inc.247-258 (1993)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1995-03-27  

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