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1994 Fiscal Year Final Research Report Summary

Study of crystal growth mechanism Utilizing microgravity

Research Project

Project/Area Number 05044081
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research InstitutionUniversity of Tokyo

Principal Investigator

NISHINAGA Tatau  University of Tokyo, Faculty of Engineering, Professor, 工学部, 教授 (10023128)

Co-Investigator(Kenkyū-buntansha) CHEROV A.a.  Institute OF Crystallography, Academy of Sciences of Russia, Professor, 結晶学研究所, 教授
DANILEWSKY A.n.  Freiburg Univ., Crystallographic Institute, Assistant, 結晶学研究所, 助手
BENZ K.w.  Crystallographic Institute, Freiburg Univ., Professor, 結晶学研究所, 教授
TANAKA Masaaki  University of Tokyo, Faculty of Engineering, Assoc.Professor, 工学部, 助教授 (30192636)
Project Period (FY) 1993 – 1994
KeywordsCrystal growth mechanism / Microgravity / Macrostep / Solution growth / Semiconductor / Spacelab / InP / GaSb
Research Abstract

Under microgravity since thermal convection is stopped, one can eliminate all kinds of convection in the solution if one avoids free surfaces. In this project, thr crystal growth mechanism in a solution was studied by making use of this ideal condition for the growth. Macrostep is especially studied to find elementary growth process. Firstly, the cross section of space grown InP was investigated by optical microscope and the behavior of macrostep was studied in detail. It was found that macrostep is formed in the beginning of the growth but it disappears when the growth approaches to a steady state. The Inp crystals were grown in Germany side in spacelab D-2 and EURECA mission. The employed growth technique was THM (traveling heater method). In this technique, rather strong temperature gradient was applied at the growth front. It turned out that the temperature gradient and the growth velocity are major factors which govern the creation and annihilation of the macrostep.
Theoretical studies were also made jointly by Japanese and German groups. By solving 3D diffusion equation numerically with a shape boundary condition of macrostep, it was shown that the angle between macrostep terrace and riser decreases with increasing temperature gradient and with decreasing the growth velocity. This means that the macrostep disappears in such conditions.
The macrostep stability was also studied for the solution growth of ADP and KDP at room temperature from water solution by Russian group. It was shown that macrostep appears or disappears depending on the flow direction against the orientation of vicinal surface. This was explained in terms of the non-uniformity of the solute concentration associated with the macrostep. This idea is consistent with the theory developed for the InP macrosteps. It was concluded that the origin of macrostep is the instability of the growing surface caused by the 3D diffusion and non-flat interface.

  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] 西永 頌: "半導体の結晶成長" まてりあ. 33. 1029-1033 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nishinaga: "Crystal Growth of Semiconductors under Microgravity in Space" Record of Alloy Semiconductor Physics and Electronics Symposium. 14. 55-56 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 西永 頌、Peiwen Ge,Changru Huo,Jinping He: "中国回収型衛星によるGaSbのブリッジマン成長(II)" 第11回宇宙利用シンポジウム論文集. 11. 214-217 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 西永 頌、菅野卓雄、斉藤制海、河東田 隆、浅田邦博、岸 真人: "微小重力下でのシリコンの融液成長" 第2回日中微小重力ワークショップ論文集. 2. 17-18 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 西永 頌、菅野卓雄、斉藤制海、河東田 隆、浅田邦博、岸 真人: "微小重力下でのシリコンの融液成長" 日本結晶成長学会誌. 21. 451-459 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.N.Danilewsky,Y,Okamoto,T.Nishinaga and K.W.Benz: "Theoretical study of macrostep stability under temperature gradient" J.Crystal Growth. 146. 171-176 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 西永 頌(分担執筆): "人工結晶と新材料の創製" 三共出版, 175 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 西永 頌(分担執筆): "マイクログラビティ" 培風館, 317 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Nishinaga: "Crystal Growth of Semiconductors" Materia Japan. 33. 1029-1033 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nishinaga: "Crystal Growth of Semiconductors under Microgravity in Space" Record of Alloy Semiconductor Physics and Electronic Symposium. 14. 55-56 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nishinaga, Peiwen Ge, Changru Huo and Jinping He: "Bridgman Growth of GaSb by Chinese Recoverable Satellite" Proc.11th ISAS Space Utilization Symposium. 11. 214-217 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nishinaga, T.Sugano, O.saito, T.Katoda, K.Asaka and M.Kishi: "Melt Growth of Si under Microgravity - Results of SL-J Experiments" Proc.Chino-Japan Work Shop on Microgravity Science and Technology. 2. 17-18 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nishinaga, T.Sugano, O.Saito, T.Katoda, K.Asaka and M.Kishi: "Melt Growth of Si under Microgravity - Results of SL-J Experiments" J.Japan.Assoc.Crystal Growth. 21. 451-459 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.N.Danilewsky, Y.Okamoto, T.Nishinaga and K.W.Benz: "Theoretical studies of Macrostep Stability under Temperature Gradient" 146. 171-176 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nishinaga (Lo-author): Sankyo Pub.Co.Artificial Crystal and New Materials, 43-50 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Nishinaga (Lo-author): Baifu-kan. Microgravity, 102-120 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1996-04-15  

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