1994 Fiscal Year Final Research Report Summary
A New in-situ Optical Probing Method for the Surface Reaction in Heteroepitaxy : Surface Photo-Interference
| Project/Area Number |
05452092
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | CHIBA UNIVERSITY |
|---|
Principal Investigator |
YOSHIKAWA Akihiko CHIBA UNIV., FACULTY OF ENG., PROFESSOR, 工学部, 教授 (20016603)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KOBAYASHI Masakazu CHIBA UNIV., FACULTY OF ENG., ASSOC.PROF., 工学部, 助教授 (10241936)
|
|---|
| Project Period (FY) |
1993 – 1994
|
| Keywords | real time monitoring / optical probing / suface photo-interference / compound semiconductors / hetero epitaxy / zinc selenide / MOVPE / SPI |
|---|
| Research Abstract |
A new in-situ optical probing method for studying surface reactions during heteroepitaxial growth has been proposed. The new method was named surface photo-interference (SPI) , because the concept of the SPI is essentially concerned with a photo-interference in the heteroepilayr. The experimental setup of the method is very similar to another optical probing method called surface photo-absorption (SPA) , but the principle is quite different between the two. Unlike SPA,fairly low energy photons that are transparent for the epilayr can also be used in SPI as a probing light. Reflecting this feature, SPI is especially useful for studying growth kinetics in heteroepitaxial growth of widegap II-VI compounds, because the effect of photocatalytic growth-rate enhancement can be avoided when using such low energy photons as a probing light. A theoretical description of SPI signal was given, and experimental results detected in MOMBE of ZnSe and CdSe were precisely discussed. Further, how SPI differs from SPA has also been discussed.
|
