1993 Fiscal Year Annual Research Report

化合物半導体量子構造の量子準位と表面・界面準位の相互作用とその制御の研究

Research Project

Project/Area Number	05452181
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 工学部, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	赤澤正道北海道大学, 工学部, 助手 (30212400) 澤田孝幸北海道大学, 量子界面エレクトロニクス研究センター, 教授 (40113568)
Keywords	量子構造 / 量子井戸 / 量子細線 / 界面準位 / 表面準位 / 化合物半導体 / フォトルミネセンス / 表面電気伝導
Research Abstract	本研究の目的は、化合物半導体の量子構造の量子準位と表面・界面準位の相互作用を解明するとともに、独自の表面・界面制御技術を用いて量子構造の表面・界面を工学的に制御することを試みることにある。 MBE法によりAlGaAs/GaAs系およびInGaAs/GaAs系を用いた量子井戸を製作し、極低温のフォトルミネセンス法により、量子井戸準位と表面準位の相互作用の有無を調べた結果、量子井戸の深さを100A以下とすると、量子井戸からの発光が指数関数的に減少し、強い相互作用が認められた。しかし、すでに報告されているような量子井戸の発光波長のシフトは認められず、また、相互作用の強い極限では、井戸層材料自身のバンド間遷移に対応する微弱な発光が認められた。これらの新しい結果を説明する新しいモデルを構築し、実験結果を定量的に説明できる見通しを得た。半絶縁性GaAsおよびInP基板上のプレーナ構造について、表面電気伝導の実験を行なった。種々の表面状態を用意し、半絶縁性基板上でのリーク電流と絶縁破壊電圧を電極間距離と温度を変えつつ調べた結果、リーク電流および絶縁破壊電圧の値やその温度依存性が、表面状態の影響を受けることが判明し、表面伝導に表面準位が関与していることを示す結果が得られた。また、GaAsの破壊電界強度は約3kV/cm程度で、InPより1桁以上低いことが判明した。さらに、Si超薄膜界面制御層を用いて表面準位を減らすことにより、これらの特性が著しく改善されることが判明した。集束イオンビーム(FIB)/集束電子ビーム(FEB)装置の立ち上げ調整および基礎実験を終了し、これらにより量子細線を形成する技術が確立された。

Research Products

(20 results)

All Other

All Publications (20 results)

[Publications] S.Kodama,M.Akazawa,H.Fujikura and H.Hasegawa: "Interface Profile Optimization in Novel Surface Passivation Scheme for InGaAs Nanostructures Using Si Interface Control Layer." Journal of Electronic Materials. Vol.22,No.3. 289-295 (1993)
[Publications] H.Hasegawa: "In Situ Characterization and Control of Compound Semiconductor Interfaces" Phil.Trans.R.Soc.Lond.A. 344. 587-595 (1993)
[Publications] 謝永桂、鈴木敏、澤田孝幸、長谷川英機: "Si超薄膜界面制御層を用いたInGaAs MISFETの製作とその電気的特性の評価" 電子情報通信学会論文誌. C-II,J76-C-II,No.7. 501-510 (1993)
[Publications] H.Hasegawa: "Material and Device Technology towards Quantum LSIs(invited paper)" IEICE Transactions on Electronics. Vol.E76-C No.7. 1045-1055 (1993)
[Publications] S.Goto,J.Ishizaki,T.Fukui and H.Hasegawa: "Atomic Layer Epitaxy Growth of GaAs/InAs Superlattice Structures." Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October). 139-144 (1993)
[Publications] M.Akazawa,H.Hasegawa,H.Tomozawa and H.Fujikura: "Investigation of valence band offset modification at GaAs-AlAs and InGaAs-InAlAs heterointerfaces by a Si interlayer." Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October). 253-256 (1993)
[Publications] T.Sawada,T.Saitoh,H.Fujikura,H.Tomozawa,S.Tohdoh and H.Hasegawa: "In situ photoluminescence characterization of growth interrupted interfaces of MBE GaAs." Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October). 387-392 (1993)
[Publications] Z.Sobiesierski,D.I.Westwood,D.A.Woolf,T.Fukui and H.Hasegawa: "Photoluminescence Spectroscopy of Near-Surface Quantum Wells;Electronic coupling between quantized energy levels and the sample surface." J.Vac.Sci.Technol.B11(4). 1723-1726 (1994)
[Publications] B.X.Yang and H.Hasegawa: "Effects of Phosphorus Pressure on Growth Rate and Layer Quality of InP Grown by Gas Source Molecular Beam Epitaxy." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 742-748 (1994)
[Publications] G.Schweeger,H.Hasegawa and H.L.Hartnagel: "Fabrication and Characterization of Direct Shottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 779-785 (1994)
[Publications] H.Fujikura,T.Iwa-ana and H.Hasegawa: "Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 919-924 (1994)
[Publications] N.J.Wu,T.Hashizume and H.Hasegawa: "Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse-Assisted Electrochemical Process." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 936-941 (1994)
[Publications] J.Ishizaki,S.Goto,M.Kishida,T.Fukui and H.Hasegawa: "Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor deposition Growth of GaAs on (001)Vicinal Surface Studied by Atomic Force MicroScopy." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 721-726 (1994)
[Publications] T.Hashizume,H.Hasegawa,R.Riemenschneider and H.L.Hartnagel: "Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 727-733 (1994)
[Publications] S.Goto,J.Ishizaki,T.Fukui and H.Hasegawa: "Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrate." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 734-741 (1994)
[Publications] T.Saitoh,H.Hasegawa and T.Sawada: "A Novel In-Situ Characterization Method of Quantum Structures by Excitation Power Dependence of Photoluminescence." Proc.of The 20th Int.Symp.GaAs and Related Compounds,Freiburg,(Germany). (to be published.). (1994)
[Publications] S.Suzuki,Y.G.Xie,T.Sawada and H.Hasegawa: "Application of Silicon Interface Control Layer Technique to Fabrication of InGaAsMetal-Insulator-Semiconductor FETs." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)
[Publications] S.Kodama and H.Hasegawa: "Control of Silicon Nitride In_<0.53> Ga_<0.47> As Interface by Ultrahin Silicon Interface Control Layer." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)
[Publications] T.Saitoh,T.Sawada and H.Hasegawa: "In-Situ Characterization of AlGaAs/GaAs Quantum Well Interfaces by Photoluminesence Surface State Spectroscopy." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)
[Publications] H.Tomozawa and H.Hasegawa: "Effects of Interface States on C-V Profile Characterization of Semiconductor Interfaces of GaAs and Related Alloys." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)

1993 Fiscal Year Annual Research Report

化合物半導体量子構造の量子準位と表面・界面準位の相互作用とその制御の研究

Principal Investigator

長谷川 英機 北海道大学, 工学部, 教授 (60001781)

Research Products

[Publications] S.Kodama,M.Akazawa,H.Fujikura and H.Hasegawa: "Interface Profile Optimization in Novel Surface Passivation Scheme for InGaAs Nanostructures Using Si Interface Control Layer." Journal of Electronic Materials. Vol.22,No.3. 289-295 (1993)

[Publications] H.Hasegawa: "In Situ Characterization and Control of Compound Semiconductor Interfaces" Phil.Trans.R.Soc.Lond.A. 344. 587-595 (1993)

[Publications] 謝永桂、鈴木敏、澤田孝幸、長谷川英機: "Si超薄膜界面制御層を用いたInGaAs MISFETの製作とその電気的特性の評価" 電子情報通信学会論文誌. C-II,J76-C-II,No.7. 501-510 (1993)

[Publications] H.Hasegawa: "Material and Device Technology towards Quantum LSIs(invited paper)" IEICE Transactions on Electronics. Vol.E76-C No.7. 1045-1055 (1993)

[Publications] S.Goto,J.Ishizaki,T.Fukui and H.Hasegawa: "Atomic Layer Epitaxy Growth of GaAs/InAs Superlattice Structures." Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October). 139-144 (1993)

[Publications] M.Akazawa,H.Hasegawa,H.Tomozawa and H.Fujikura: "Investigation of valence band offset modification at GaAs-AlAs and InGaAs-InAlAs heterointerfaces by a Si interlayer." Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October). 253-256 (1993)

[Publications] T.Sawada,T.Saitoh,H.Fujikura,H.Tomozawa,S.Tohdoh and H.Hasegawa: "In situ photoluminescence characterization of growth interrupted interfaces of MBE GaAs." Proc.of 19th Int.Symp.GaAs and Related Compounds(Karuizawa,Japan,28 September-2 October). 387-392 (1993)

[Publications] Z.Sobiesierski,D.I.Westwood,D.A.Woolf,T.Fukui and H.Hasegawa: "Photoluminescence Spectroscopy of Near-Surface Quantum Wells;Electronic coupling between quantized energy levels and the sample surface." J.Vac.Sci.Technol.B11(4). 1723-1726 (1994)

[Publications] B.X.Yang and H.Hasegawa: "Effects of Phosphorus Pressure on Growth Rate and Layer Quality of InP Grown by Gas Source Molecular Beam Epitaxy." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 742-748 (1994)

[Publications] G.Schweeger,H.Hasegawa and H.L.Hartnagel: "Fabrication and Characterization of Direct Shottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 779-785 (1994)

[Publications] H.Fujikura,T.Iwa-ana and H.Hasegawa: "Fabrication of InGaAs Wires by Preferential Molecular Beam Epitaxy Growth on Corrugated InP Substrate." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 919-924 (1994)

[Publications] N.J.Wu,T.Hashizume and H.Hasegawa: "Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse-Assisted Electrochemical Process." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 936-941 (1994)

[Publications] J.Ishizaki,S.Goto,M.Kishida,T.Fukui and H.Hasegawa: "Mechanism of Multiatomic Step Formation during Metalorganic Chemical Vapor deposition Growth of GaAs on (001)Vicinal Surface Studied by Atomic Force MicroScopy." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 721-726 (1994)

[Publications] T.Hashizume,H.Hasegawa,R.Riemenschneider and H.L.Hartnagel: "Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 727-733 (1994)

[Publications] S.Goto,J.Ishizaki,T.Fukui and H.Hasegawa: "Growth Behavior and Mechanism of Alkyl-Desorption-Limited Epitaxial Growth of GaAs on Exactly Oriented and Vicinal Substrate." Jpn.J.Appl.Phys.Vol.33 Part1 No.1B. 734-741 (1994)

[Publications] T.Saitoh,H.Hasegawa and T.Sawada: "A Novel In-Situ Characterization Method of Quantum Structures by Excitation Power Dependence of Photoluminescence." Proc.of The 20th Int.Symp.GaAs and Related Compounds,Freiburg,(Germany). (to be published.). (1994)

[Publications] S.Suzuki,Y.G.Xie,T.Sawada and H.Hasegawa: "Application of Silicon Interface Control Layer Technique to Fabrication of InGaAsMetal-Insulator-Semiconductor FETs." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)

[Publications] S.Kodama and H.Hasegawa: "Control of Silicon Nitride In_<0.53> Ga_<0.47> As Interface by Ultrahin Silicon Interface Control Layer." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)

[Publications] T.Saitoh,T.Sawada and H.Hasegawa: "In-Situ Characterization of AlGaAs/GaAs Quantum Well Interfaces by Photoluminesence Surface State Spectroscopy." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)

[Publications] H.Tomozawa and H.Hasegawa: "Effects of Interface States on C-V Profile Characterization of Semiconductor Interfaces of GaAs and Related Alloys." Proc.of 1st Int.Symp.Control of Semiconductor Interfaces(Karuizawa,Japan). (to be published.). (1994)

長谷川英機北海道大学, 工学部, 教授 (60001781)