1994 Fiscal Year Final Research Report Summary
Fundamental Research of Long-Wavelength Quantum-Wire Semiconductor Lasers Consisiting of Compressively Strained Super-Lattices
| Project/Area Number |
05452184
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ARAI Shigehisa Tokyo Institute of Technology, Faculty of Eng., Professor Research Center for Quantum Effect Electronics, 量子効果エレクトロニクス研究センター, 教授 (30151137)
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| Co-Investigator(Kenkyū-buntansha) |
ASADA Masahiro Tokyo Instutute of Technology, Faculty of Eng., Assistant Professor Department o, 工学部, 助教授 (30167887)
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| Project Period (FY) |
1993 – 1994
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| Keywords | semiconductor laser / quantum-wire / quantum-box / strained quantum well / electron beam lithography / ECR dry etching / spontaneous emission / carrier capture time |
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| Research Abstract |
Ga_<1-x>In_XAs/GaInAsP/InP strained-quantum-film, -wire, and -box lasers have been studied both theoretically and experimentally. By introducing tensile-strained quantum-wire (QW) structure into the active layr, room temperature CW operation fo GRIN-SCH single-QW lasers with fairly low threshold current was achieved. GaInAs/GaInAsP (strained-) quantum-box (QB) structures were fabricated and obvious 0-dimensional QB size effects were observed. Temperature dependences of lasing properties were measured and compared with those of quantum-film lasers. Carrier injection process in SCH quantum-film and wire lasers was investigated.
The results obtaned in this research are as follows.
(1) Temperature dependence of lasing properties of quasi-quantum-wire lasers were measured and compared with those of quantum-film lasers.
(2) By combining eletron beam lithography and ECR dry etching, 20-30nm wide GaInAs/GaInAsP multi-quantum-wire and -box structures with the aspect ratio greater than 6 were realized. Moreover, low damage feature of this fabrication process was confirmed by PL observation.
(3) An emission energy level shift due to obvious 0-dimentional quantum-box effect was observed at 4K with GaInAs/GaInAsP single-layr (strained-) embedded quantum-box structures.
(4) Lasin action of Ga_<0.67>In_<0.33>SAs/GaInAsP/InP tensile-strained quantum-box laser was demonstrated for the first time. The fabricated QB size is 30nm diameter and 12nm thick with a period of 70nm. The threshold current density was 7.6KA/cm^2 at 77K with pulse current injection.
(5) Carrier capture time of SCH-QW-lasers was measured by the spontaneous emission spectra above threshold. Difference between unstrained, tensile-strained, and compressive-strained lasers was obtained.
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