• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

1994 Fiscal Year Final Research Report Summary

Preparation of polycrystalline SiC films by dry process and their application to thin film transistors

Research Project

Project/Area Number 05452186
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionFaculty of Engineering, Shinshu University

Principal Investigator

ONUMA Yoshiharu  Department of Electric and Electronic Engineering, Faculty of Engineering, Shinshu University, Professor, 工学部, 教授 (40020979)

Co-Investigator(Kenkyū-buntansha) KAMIMURA Kiichi  Department of Electric and Electronic Engineering, Faculty of Engineering, Shins, 工学部, 助教授 (40113005)
Project Period (FY) 1993 – 1994
Keywordssilicon carbide / sputtering / thin film / polycrystalline
Research Abstract

The summary of this research report is as follows ;
1.Preparation of SiC Films : Polycrystalline SiC films were deposited by reactive sputtering. The target was made from a single crystal Si wafer. The reactive gas was CH_4. The substrate temperature must be higher than 700゚C to obtain a high quality film. A heater made from carbon ribbon was used to obtain higher substrate temperature than 700゚C.
2.Characterization of Crystal Structure : Crystal structure of the films was characterized by X-ray diffraction and electron beam diffraction. The sample was polycrystalline when they were deposited at higher temperature than 700゚C.The results showed that it was possible by this method to reduce the substrate temperature to 700゚C.
3.Chemical Properties : XPS measurement showed that the ratio of Si/C was affected not only by the partial pressure of CH_4s but also by the total pressure.
4.Electrical Properties : The films were characterized by photo-absorption measurement and Hall measurement. The value of absorption edge was almost the same to the value of 3C-SiC.The results of hall measurement showed that the best quality for the application to TFT was obtained when the films were deposited at 750゚C.
5.The Control of Conduction Type : Aluminum was more effective than boron as the acceptor impurity to control the conduction type.
6.Application to TFT and Other Devices : Thin film transistors, pressure sensors and flow sensors were fabricate using the polycrystalline. SiC films to show its applicability to electronic devices.

  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] Kiichi KAMIMURA,Hiroyuki TANAKA,Seiji MIYAZAKI,Toshio HOMMA,Sou YONEKUBO,and Yoshiharu ONUMA,: "Preparation of SiC films by plasma-assisted chemical vapor deposition using SiCl_4"" Inst.Phys,Conf.Ser.No.137:Capter 1,Paper presented at the 5he SiC abd Related Materials Conf.,Washington,DC 1993,pp.109-112(IOP Publishing Ltd 1994).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yoshiharu ONUMA,Ryoichi OKADA,Hideki ONO.and Kiichi KAMIMURA,: "Breparation of polycrystalline SiC thin films by a reactive sputtering process" Inst.Phys,Conf.Ser.No.137:Capter 1,Paper presented at the 5th SiC abd Related,Materials Conf.,Washington,DC 1993,pp.133-136(IOP Publishing Ltd 1994).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kiichi KAMIMURA,Kazuoki,SUGIURA,Yoshihiro NAGURA,and Yoshiharu ONUMA,: "Preparation and properties of polycrystalline SiC/single-crystal Si heterojunction diodes" Inst.Phys,Conf.Ser.No.137:Capter 1,Paper presented at the 5th SiC abd Related Materials Conf.,Washington,DC 1993,pp.105-108(IOP Publishing Ltd 1994).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Toshio HOMMA,Kiichi KAMIMURA,Hao YiCai,and Yoshiharu ONUMA,: "Preparation of polycrystalline SiC films for sensors used at high temperature" Sensors and Acutuators A,. Vol.40. 93-96 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kiichi KAMIMURA,Seiji MIYAZAKI,Tatsuya MIWA,Ryoichi OKADA,Masato NAKAO,and Yoshiharu ONUMA,: "Fabrication of small size flow sensor using polycrystalline SiC film" Technical Digest of the 12th Sensor Symposium. 155-158 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 牧村 浩明,上村 喜一,小沼 義治: "反応性スパッタ法によるNbC_xN_<1-X>超伝導薄膜の作成" 電気学会論文誌A. Vo1.114-A,No.6. 476-480 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] So YNEKUBO,Masato NAKANO,Kiichi KAMIMURA,and Yoshiharu ONUMA,: "Preparation of polycrystalline SiC films by sputtering usin carbon and silicon target" Proceedings of the First Magneto-Electronics International Symposium. 105-107 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 米久保 荘,田中 裕之,上村 喜一,小沼 義治,: "四塩化ケイ素を用いたプラズマCVD法によるSiC薄膜の形成" 電気学会論文誌A. (掲載決定).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kiichi KAMIMURA,Hiroyuki TANAKA,Seiji MIYAZALI,Toshio HOMMA,Sou YONE KUBO,and Yosiharu ONUMA: "Preparation of SiC films by plasma-assisted chemical vapor deposition using SiCl_4" Inst.Phys, Conf.Ser.No.137 : Capter 1, Paper presented at the 5th SiC and Related Materials Conf., Washington (IOP Publishing Ltd 1994). 109-112 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yoshiharu ONUMA,Ryoichi OKADA,Hideki ONO,and Kiichi KAMIMURA: "Preparation of polycrystalline SiC thin films by a reactive sputtering process" Inst.Phys, Conf.Ser.No.137 : Capter 1, Paper presented at the 5th SiC and Related Materials Conf., Washington (IOP Publishing Ltd 1994). 133-136 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kiichi KAMIMURA,Kazuoki SUGIURA,Yoshihiro NAGURA,and Yoshiharu ONUMA: "Preparation and properties of polycrystalline SiC/single-crystal Si heterojunction diodes" Inst.Phys, Conf.Ser.No.137 : Capter 1, Paper presented at the 5th SiC and Related Materials Conf., Washington (IOP Publishing Ltd 1994). 105-108 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Toshio HOMMA,Kiichi KAMIMURA,Hao Yi Cai, and Yoshiharu ONUMA: "Preparation of polycrystalline SiC films for sensors used at high temperature" Sensors and Acutuators A. Vol.40. 93-96 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kiichi KAMIMURA,Seiji MIYAZAKI,Tatsuya MIWA,Ryoichi OKADA,Masato NAKAO,and Yoshiharu ONUMA: "Fabrication of small size flow sensor using polycrystalline SiC film" Technical Digest of the 12th Sensor Symposium. 155-158 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hiroaki MAKIMURA,Kiichi KAMIMURA,and Yoshiharu ONUMA: "Fabrication of NbC_xN_<1-x> superconducting thin films deposited by reactive sputtering" Trans.IEE of Japan. Vol.114-A,No.6. 476-480 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Sou YONEKUBO,Masato NAKAO,Kiichi KAMIMURA,and Yoshiharu ONUMA: "Preparation of polycrystalline SiC films by sputtering using carbon and silicon target" Proceedings of the First Magneto-Electronics International Symposium. 105-107 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Sou YONEKUBO,Hiroyuki TANAKA,Kiichi KAMIMURA,and Yoshiharu ONUMA: "Preparation of SiC thin films by plasma CVD using SiCl_4" Trans.IEE of Japan. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 1996-04-15  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi