1994 Fiscal Year Final Research Report Summary
Fundamental Research on Functional Realization of Semiconductive Ceramics
| Project/Area Number |
05452279
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Waseda University |
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Principal Investigator |
ICHINOSE Noboru Waseda University School of Sci.& Eng.Professor, 理工学部, 教授 (60176295)
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| Project Period (FY) |
1993 – 1994
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| Keywords | Semiconductive Ceramics / Nonlinear Resistor / Varistor / Grain Boundary Structure / Interface / Multilayr Film / Frontier Electron / Dielectric Anomaly |
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| Research Abstract |
1.Model Interface in Ceramic Multilayred Films
The nonlinear V-1 characteristics of semiconductive ceramics originate in a grain boundary or interface. The model interface in multilayred films such as Ni/ZnO (CoO)/Pr_6O_<11>/Au fabricated by the sputtering technique is used for understanding the nonlinear conduction mechanism. The study of such a model interface is useful for searching new artificial materials.
Dielectric Anomaly in the Interface of Ceramics
A broad peak above the Curie temperature of lead iron niobate pb (Fe_<1/2>Nb_<1/2>) O_3 may be related to interfaces at the grain boundary. Such dielectric anomaly and pyroelectric current of this compound may be explained by the space-charge polarization in the interfaces of the grain bounday due to ionic valence changes from Fe^<3+> to Fe^<2+> in B-site of the perovskite structure.
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