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1995 Fiscal Year Final Research Report Summary

Development of Preparation System of Nano-scale Vacuum Microdevices

Research Project

Project/Area Number 05505001
Research Category

Grant-in-Aid for Developmental Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field Applied physics, general
Research InstitutionNagoya Institute of Technology

Principal Investigator

OKUYAMA Fumio  Nagoya Institute of Technology Faculty of Engineering Professor, 工学部, 教授 (30024235)

Co-Investigator(Kenkyū-buntansha) MOGAMI A.  Japan Electron Optical Loboratory Basic Reserach Division Head, 基礎研究部長
TANEMURA Masaki  Nagoya Institute of Technology Faculty of Engineering Associate Professor, 工学部, 助教授 (30236715)
KITA S.  Nagoya Institute of Technology Faculty of Engineering Associate Professor, 工学部, 助教授 (60006153)
Project Period (FY) 1993 – 1995
Keywordsvacuum microelectronics / field emission / sputtering
Research Abstract

The aim of this project is to construct a system for preparing nanoscale vacuum microdevices (FEAs). The system constructed consists of a UHV SEM,a main component of JAMP-7100 scanning Auger microprobe, and a high-speed ion gun, having the following features.
1.It enables us to prepare metalic and semiconducting FEAs with any geometry.
2.For any type of FEAs geometry, resistive heating, ion sputtering, geometrical determination and I-V characteristics measurement are allowed in-situ.
3.The emitter position is controllable in an accuracy of 1 mum.
The emission charcteristcs of metal, semiconductor and diamond FEAs were measured with the aid of this system, the results of which were well beyond our initial expectations. Also, this system is so original in design that we see no global rival. In quality, too, the system is sure to be No.1 in the world.
In the final fiscal year, we tried to measure I-V characteristics of diamond FEAs, and found a surprising fact that electron emission is dramaticlly enhanced above 400゚C.This finding is far beyond the current knowledge on field electron emission from diamond, and thus may open a new application field of diamond FEAs.

  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] 加藤・野津・藤本 奥山・種村: "structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 藤本・野津・奥山: "Geometry and structure of sputter-induced cones on nickel-seeded silicon" J.Appl.Phys.77. 2725-2734 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 張・藤本・奥山: "Unusual texturing of Ar-sputtered InP surfaces associated with Ni-seding" Nuclear Instruments and Methods. B101. 306-310 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 奥山・加藤: "Indium phosphide whiskers grown by ion bombardment" Surface Sci.Lett.338. 857-862 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Kato, M.Nozu, Y.Fujimoto and F.Okuyama: "Structure and morphology of microprotrusions grown on Ar-sputtered InP" J.Vac.Sci.Technol.A13. 207-215 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Fujimoto, M.Nozu and F.Okuyama: "Geometry and structure of sputterinduced cones on nickel-seeded silicon" J.Appl.Phys.77. 2725-2734 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y,Q.Zhang, Y.Fujimoto and F.Okuyama: "Unusual texturing of Ar-sputtered Inp surfaces associated with Ni-seeding" Nucl.Insteum.Methods. B101. 306-310 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] F.Okuyama and J.Kato: "Indium phosphide whiskers grown by ion bomgardment" Surface Sci.Lett.338. 857-862 (1995)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1997-03-04  

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