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1995 Fiscal Year Final Research Report Summary

Development of Ohmic contact materials for ZnSe-based blue light emitting devices

Research Project

Project/Area Number 05555003
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

MURAKAMI Masanori  Kyoto Univ., Graduate School of Engineering, Professor, 工学研究科, 教授 (70229970)

Co-Investigator(Kenkyū-buntansha) SUZUKI Akira  Sharp Corporation Manager, 部長
SAKURAI Takeshi  Sharp Corporation Vice Director, 副所長
OTUKI Akira  Kyoto Univ., Graduate School of Engineering, Research Associate, 工学研究科, 助手 (10026148)
OKU Takeo  Kyoto Univ., Graduate School of Engineering, Research Associate, 工学研究科, 助手 (30221849)
KOIDE Yasuo  Kyoto Univ., Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (70195650)
Project Period (FY) 1993 – 1995
Keywordsp-ZnSe / Ohmic contact / Schottky barrier height / deposition / annealing / Cd-based contact / metal interface
Research Abstract

In order to explore a possibility to prepare low resistance Ohmic contacts by the conventional deposition and annealing (DA) technique, the effects of the ZnSe surface cleaning and formation of an intermediate heterostructure on the electrical properties at the metal/semiconductor interface have been investigated for the N-doped p-ZnSe substrates grown by the molecular beam epitaxy (MBE) technique. The turn-on voltage (V_T) (corresponding to the breakdown voltage) was significantly reduced by cleaning the ZnSe surface in saturated bromine water (SBW) solution, which was found to be due to removal of the native oxide layr grown on the ZnSe surface. An addition of a small amount of Cd to the W contact reduced the V_T values of the W contacts from about 11 to 6 V.The microstructural analysis indicated the formation of the Cd_XZn_<1-x>Se layrs at the metal/ZnSe interface with Cd composition (x) larger than 0.9. From the present experiment, it was concluded that formation of the thin large-area Cd_xZn_<1-x>Se layrs is crucial to reduce the V_T value to nearly zero by the conventional DA technique.

  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] 小出 康夫: "金属/ZnSe界面とオーミック・コンタクト" 日本金属学会誌「まてりあ」. 33. 738-743 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 村上 正紀: "化合物半導体用コンタクト材料のメゾスコピック化" 日本金属学会誌「まてりあ」. 34. 987-991 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. Ishikawa: "Surface cleaning effects on electrical properties of Ni contacting to p-type ZnSe" J. Vac. Sci. & Technol. B. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O. Tadanaga: "Dependences of etectrical properties on work functions of metals contacting to p-type ZnSe" Jpn. J. Appl. Phys.(in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Hashimoto: "Cd and Te based Ohmic contact materials to p-type ZnSe" J. Electron. Materials. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. Koide: "Cd-based Ohmic contact meterials to p-type ZnSe" J. Crystal Growth. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M. Murakami: "Ohmic contact materials for compound semiconductors" Proceedings of Electrochemical Society Meeting. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H. Ishikawa: "Surface cleaning effects on electrical properties of Ni contacting to p-type ZnSe" J. Vac. Sci. & Technol B. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 小出 康夫: "金属/半導体および半導体/半導体接合界面におけるエネルギー障壁" 日本金属学会誌「まてりあ」. 35. 印刷中 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Koide: "Ohmic contact and metal/ZnSe interfaces" J.Jpn Institute of Metals. vol.33. 738-743 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Murakami: "Mezo-scale Ohmic contact materials for compound semiconductors" J.Jpn Institute of Metals. vol.34. 987-991 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Ishikawa, K.Tsuki, Y.Koide, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Surface cleaning effects on electrical properties of Ni contacting to p-type ZnSe" J.Vac.Sci.& Technol.B (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O.Tadanaga, Y.Koide, K.Hashimoto, T.Oku, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Dependences of electrical properties on work functions of metals contacting to p-type ZnSe" Jpn.J.Appl.Phys.(in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hashimoto, Y.Koide, O.Tadanaga, T.Oku, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Cd and Te based Ohmic contact materials to p-type ZnSe" J.Electron.Materials. (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Koide, K.Hashimoto, O.Tadanaga, T.Oku, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Cd-based Ohmic contact materials to p-type ZnSe" J.Crystal Growth. (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1997-03-04  

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