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1994 Fiscal Year Final Research Report Summary

Development of Stress Measurement of Silicon Single Crystal by Infrared Polarized Laser

Research Project

Project/Area Number 05555035
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Materials/Mechanics of materials
Research InstitutionTOKYO DENKI UNIVERSITY

Principal Investigator

NIITSU Yasushi  Tokyo Denki Univ., Mechanical Engineering, Associate Prof, 工学部, 助教授 (70143659)

Co-Investigator(Kenkyū-buntansha) IKEDA Teruki  Japan spectroscopy Co.Ltd., Applied Optics Section., Project Leader, 応用研究課, 課長
SHINOKURA Tsuneki  Fuji Electric Co.Ltd., Production Tech.Lab., Chief Researcher, 生産技術研究所, 主任研究員
YAMAGUCHI Yasushi  Tokyo Univ., General Education, Associate Prof, 教養, 助教授 (80210376)
Project Period (FY) 1993 – 1994
KeywordsStress Measurement / Silicon Single Crystal / Photoelasticity / Infrared Laser
Research Abstract

In this project, thetheory and method of the measurement of optical birefringence in silicon single crystal were investigated. We have developed the potical apparatus which possess high sensitivity to measure small birefringence typically produced by stress using the method of laser photoelasticity. The equipment adopts the He-Ne infrared laser as a light source to measure the stress in silicon single crystal. The magnitude of principal stress difference as well as the directions were obtained simultaneously and quantitatively by our developed measuring system.
The optical birefringences were measured for Si-wafer specimens by applying tensile loads to several crystal orientations. Consequently, it was discovered that the photoelastic constant depended on the crystalline orientation and the birefringence direction dosen't coincide with the principal stress direction. By the stress strain analysis of silicon single crystal, it was found that the birefringence direction coincides with the principal strain direction and the relation between the principal strain difference and the retardation was independent of crystal orientation. These results show that Brewster's Law (linear relation between optical retardation and principal stress difference)should be modified.

  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] Yasusi NIITSU: "Accuracy Evaluation of Stress Measurement in Silicon Crystal by Microscopic Raman Spectroscopy" Proc.Int.Electronics Packaging Conference. 1993-9 Vol.1. 255-259 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yasusi NIITSU: "A Stress Measuring Method by Polarized Laser and Photo-Elastic Modulator" Proc.Int.Electronics Packaging Conference. 1993-9 Vol.1. 157-161 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yasusi NIITSU: "Stress Measurement in Si-Wafer using Polarized Infrared Laser Photoelasticity" Mech.and Materials for Electronic Packaging. AMD-Vol.187. 37-40 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yasusi NIITSU: "Stress Measurement of Transparent Materials by Polarized Laser" JSME Int.J.Series-A. Vol.38. 68-72 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yasusi NIITSU: "Infuence of Crystal Orientation on Photoelastic Property of Silicon Single Crystal" Proc.of ASME Int.Conf.on Electronic Packaging. (発表予定). (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.NIITSU,K.ICHINOSE and K.IKEGAMI: "Stress Measurement of Transparent Materials by Polarized Laser" Trans.of JSME,Series-A. Vol.59, No.559. 600-605 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU,T.IKEDA and T.TADOKORO: "Accuracy Evaluation of Stress Measurement in Silicon Crystal by Microscopic Raman Spectroscopy" Proc.of Int.Electronics Packaging Conference. Vol.1. 255-259 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU,K.ICHINOSE and K.IKEGAMI: "A Stress Measuring Method by Polarized Laser and Photo-Elastic Modulator" Proc.of Int.Electronics Packaging Conference. Vol.1. 157-161 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K,ICHINOSE and Y.NIITSU: "Scanning Stress Measurement Method by Laser Photoelasticity" Trans.of JSME,Series-A. Vol.60, No.572. 1114-1119 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU,K.ICHINOSE and K,IKEGAMI: "Micro-stress Measurement by Laser Photoelasticity" Mech.and Materials for Electronic Packaging. Vol.2, AMD-Vol.187, ASME-WAM. 29-35 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU and K.GOMI: "Stress Measurement in Si-Wafer using Polarized Infrared Laser Photoelasticity" Mech.and Materials for Electronic Packaging. Vol.2, AMD-VOl.187, ASME-WAM. 37-40 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU and K.GOMI: "Stress Measurement in Si-Wafer using Polarized Infrared Laser" Proc.of JSME Annual Meeting. No.940-10 Vol.2. 723-725 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU,K.GOMI and K.ICHINOSE: "Development of Scanning Polarized Laser Microscope and its Application for Local Stress Evaluation" Proc.of JSME Meeting. No.940-37, Vol.B. 87-88 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU,K.ICHINOSE and K.IKEGAMI: "Stress Measurement of Transparent Materials by Polarized Laser" JSME Int.J.Series-A. Vol.38, No.1. 68-72 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.GOMI,T.ONO and Y.NIITSU: "Effect of Crystal Orientation on Photoelastic Constant of Silicon Single Crystal" Proc.of JSME Annual Meeting. No.95-1, Vol.6. 141-142 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.NIITSU and K.GOMI: "Influence of Crystal Orientation on Photoelastic Properties of Silicon Single Crystal" Proc.of Advanced in Electronic Packaging. Vol.10-2. 1239-1245 (1995)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1996-04-15  

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