1994 Fiscal Year Final Research Report Summary
Development of"in situ"measuring system for an oxidization process of metals by using Raman spectroscopy
| Project/Area Number |
05555180
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Structural/Functional materials
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
ARASHI Haruo Faculty of Engineering, Tohoku University, Professor, 工学部, 教授 (80006155)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMIZU Ryousuke ATAGO BUSSAN CO., LTD., Director, ラマンシステム部, 部長
NARUSHIMA Takayuki Faculty of Engineering, Tohoku University, Associate Professor, 工学部, 助教授 (20198394)
IGUCHI Yasutaka Faculty of Engineering, Tohoku University, Professor, 工学部, 教授 (90005413)
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| Project Period (FY) |
1993 – 1994
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| Keywords | High Temperature Oxidization / High Temperature Raman / Micro Raman / Fe-Si Alloy / Liquid Al-Mg Alloy |
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| Research Abstract |
Laser Raman spectroscopy is one of the most suitable methods for"in situ"observation of the oxidization process of metals from the following points of view ; specimens are not destroyed and a small area can be analyzed by micro-Raman spectroscopy. We developed the "in situ"measuring system, which has a triple monochromator, a CCD detector, and a heating stage which can change the environmental conditions, for an oxidization process of metals by using Raman spectroscopy. This system clarified that the growth process of oxide films during thermal oxidization of Fe-6.5mass%Si alloy at 1073K in O_2 and CO_2 atmospheres depends on the concentration of the oxygen defects in the SiO_2 surface layr. This system also performed to observe the oxidization of the liquid Al and Al-Mg alloys at 1273K.
This system developed in this study is the suitable method for"in situ"observation of oxidization especially at high temperatures.
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