1994 Fiscal Year Final Research Report Summary
Development of Noble Metal-Gate TiO_2 Schottky Diode DH sensor
| Project/Area Number |
05555186
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
SUGIMOTO Katsuhisa Tohoku University, Engineering, Professor, 工学部, 教授 (80005397)
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| Co-Investigator(Kenkyū-buntansha) |
AKAO Noboru Tohoku University, Engineering, Research Assistant, 工学部, 助手 (80222503)
HARA Nobuyoshi Tohoku University, Engineering, Associate Professor, 工学部, 助教授 (40111257)
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| Project Period (FY) |
1993 – 1994
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| Keywords | Dissolved hydrogen sensor / TiO_2 single crystal / Noble metal base alloy / High-temperature and high-pressure solution / Ion beam sputtering |
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| Research Abstract |
An application of hydrogen-sensitive metal-gate Schottky barrier diodes to dissolved hydrogen (DH) sensors was examined. Single crystals of Nb_2O_5-doped TiO_2 and thin films of Pd-base alloy (Pd-Ag, Pd-Au, Pd-Pt) were used as a semiconductor and a catalytic metal-gate of diodes, respectively. The DH response of the diodes was first examined in aqueous solutions with various DH concentrations at 298K.It was found that Pd-30-40at%Ag alloy-gate diodes showed a high sensitivity to DH over a wide concentration range. They did not suffer from hydrogen embrittlement at 298K and had a good corrosion resistance at elevated temperatures. Linear relationships between the response voltage of Pd-30-40at%Ag diodes and the DH concentration of solutions were found at every temperatures examined (1298-573K) . The sensitivities of the diodes to pH were less than 10% of their sensitivities to DH.The diodes showed good long-term stability, while their DH response rate decreased after prolonged exposure in high-temperature solutions.
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Research Products
(2 results)
