1994 Fiscal Year Final Research Report Summary
DEVELOPMENT OF GLASSES FOR HIGH EFFICIENT BRAGG REFRACTION GRATINGS
| Project/Area Number |
05555235
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
無機工業化学
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| Research Institution | RESEARCH LABORATORY OF ENGINEERING MATERIALS |
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Principal Investigator |
HOSONO Hideo TOKYO INSTITUTE OF TECHNOLOGY, RESEARCH LABORATORY OF ENGINEERING MATERIALS,ASSOCIATE PROFESSOR, 工業材料研究所, 助教授 (30157028)
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| Co-Investigator(Kenkyū-buntansha) |
HISHIDA Shunichi NATIONAL RESEARCH INSTITUTE FOR INORGANIC NATERIALS,CHIEF INVESTIGATOR, 第1グループ, 主任研究官
NISHII Junji GOVERNMENT RESEARCH INSTITUTE AT OSAKA, GLASS AND CERAMICS DIVISION,INVESTIGATOR, ガラスセラミック部, 研究員
AWAZU Koichi ELECTROTECHNICAL LABORATORY, DIVISION OF OUANTUMRADIATION,INVESTIGATOR, 量子放射部, 研究員
MUTA Kenichi SHOWA WIRE AND CABLE MANAGER OF MATERIALS FOR OPTICAL COMMUNICATIONS, 光通信研究所, 課長
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| Project Period (FY) |
1993 – 1994
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| Keywords | Bragg gratings / GeO_2-SiO_2 glasses / defects in glass / glasses / photosensitivity / optical changes |
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| Research Abstract |
(1) Origin of photo-induced refractive index changes(PIRC)in GeO_2-SiO_2 glasses were found to be due to photochemical conversion of an oxygen vacancy(neutral oxygen monovacancy, NOMV,)coordinated by two Ge^<4+> ions into a GeE'center which has an intense absorption band at around 6eV.Thus, we concluded that enhancement of the NOMV leads to that of photosensitivity in SiO_2 : Ge glasses.
(2) Heat treatment of SiO_2 : Ge glasses in a H_2 atmosphere at 500 C,which is far below Tg, for 70 hincreased selectively the concentrations of the NOMV by an order of magnitude.
(3) It was found that concentrations of the NOMV were enhanced by one or two orders of magnitude by rf-sputtered deposited thin glass films of SiO_2 : Ge by heating at 350C for 30 min in vacuum.
(4) Concentrations of the NOMV were successfully enhanced over 3 to 4 orders of magnitude by implanting protons into SiO_2 : Ge glasses. Photobleachable optical band peaking at 5 eV were created in SiO_2 glasses implanted with implanted ions with electropositive nature such as P and B.These bands were simply bleached with illumination with 5 ev light and no formation of Si E' center was seen. The former and the latter gave positive and negative refractive index changes after uvbleaching.
(5) Although various optical bands associated with Al ions were identified in synthetic SiO_2 : Alglasses irradiated with gamma and excimer lasers, none of the bands showed photobleaching nature.
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