1994 Fiscal Year Final Research Report Summary
Dislocation motion in III-V compound semiconductors
| Project/Area Number |
05640401
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
固体物性Ⅱ(磁性・金属・低温)
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| Research Institution | Institute for Materials Research Tohoku University |
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Principal Investigator |
SUMINO Koji Institute for Materials Research, Tohoku University, Professor Professor, 金属材料研究所, 教授 (50005849)
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| Co-Investigator(Kenkyū-buntansha) |
YONENAGA Ichiro Institute for Materials Research, Tohoku University, Professor Scientific Assist, 金属材料研究所, 助手 (20134041)
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| Project Period (FY) |
1993 – 1994
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| Keywords | III-V Compound Semiconductors / Dislocations / Mobilities / Impurity Effects |
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| Research Abstract |
Dynamic characteristics of dislocations in III-V compound semiconductor crystals and the influence of various kinds of impurities on it have been investigated.
The followings are established in the present research.
1.The velocities of dislocations of alpha, beta and screw types in III-V compounds and those doped with various kinds of impurities were measured as a function of temperature and stress and established to be described by an empirical equation.
2.The characteristics of dislocation velocities differ from crystal to crystal. In comparison with the velocities of dislocations in GaAs, dislocations in GaP move with lower velocities by two orders of magnitude, dislocations in InP move with comparable velocities and dislocations in InAs move faster by one order of magnitude. The result agrees satisfactorily with that obtained in the research on the strength of such crystals. Such characteristics suggests that the dislocation mobility in III-V compound crystals is controlled with a component of the homopolar energy gap.
3.Impurities of donor and acceptor types influence the dislocation mobilities in a various manner, depending on the types of the crystal. The characteristics are explained by a mechanism due to the interaction between the dislocation energy levels and Fermi energy in the crystals.
4.In crystals doped with certain kinds of impurities there exists a critical stress for dislocation generation depending on a temperature, which can be explained by the locking mechanism due to impurity segregation on dislocations.
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