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1994 Fiscal Year Final Research Report Summary

Electronic states of site-controlled impurity layrs at semiconductor interfaces and its applications to control of band discontinuities

Research Project

Project/Area Number 05650023
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 表面界面物性
Research InstitutionInstitute of Industrial Science, University of Tokyo.

Principal Investigator

SAITO Toshio  Univ.of Tokyo, IIS,Research Associate, 生産技術研究所, 助手 (90170513)

Co-Investigator(Kenkyū-buntansha) IKOMA Toshiaki  T.I.Tsukuba R & D center, Director, 筑波研究開発センター, 取締役社長(研究職) (80013118)
HIRAKAWA Kazuhiko  Univ.of Tokyo, IIS,Associate Prof., 生産技術研究所, 助教授 (10183097)
Project Period (FY) 1993 – 1994
Keywordshetero-junction / gallium arsenide / aluminum arsenide / band discontinuity / tight-binding method / silicon / photoelectron spectroscopy / face orientation
Research Abstract

1. To predict band discontinuities at hetero-interfaces theoretically, we constructed a program for the self-consistent tight-binding method with the sp^3s^* basis. In this method, the atomic orbital energies are modified with the induced electrostatic potentials calculated from the electronic charges at interfaces.
2. Using this program, we calculated valence-band discontinuities, DELTAE_v, at the GaAs/AlAs interfaces. The calculation gives DELTAE_v=0.51 eV at the (100) and (110) interfaces, and DELTAE_v=0.50 eV at the (311) A interface. DELTAE_v at the GaAs/AlAs interface is almost constant for various interface orientations, even for the high-index interfaces.
3. DELTAE_v at the GaAs/Si (2ML) /AlAs interface is calculated to be ; DELTAE_v=-1.36 eV [ (100)-As interface] , 2.1 eV [ (100)-Ga interface] , 0.35 eV [ (110) interface] , -0.12 eV [ (311) A-As interface] , and 1.67 eV [ (311) A-Ga interface] . DELTAE_v is determined by the Si-induced interface dipole and depends strongly on the interface orientations.
4. DELTAE_v at the (100) GaAs/InAs (1ML) /AlAs interface is calculated to be 0.50 eV,which is practically equal to DELTAE_v=0.51 eV at the GaAs/AlAs interface with no insertion-layrs. The insertion of the strained InAs monolayr changes the detail of valence charge density at the GaAs/AlAs interface but does not change DELTAE_v. The result of calculation is consistent with our experimental measurement for the MBE-grown samples.

  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] T.Saito: "Band Discontinuity and Effects of Si-Insertion Layer at (311)A GaAs/AlAs Interface" Solid-state Electronics. 37. 743-745 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Saito: "Band Discontinuity in GaAs/AlAs Superlattices with InAs Strained Insertion-Layers" Superlattices and Microstructures. 15. 405-407 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Saito: "Band Discontinuity at the (311)A GaAs/AlAs Interface and Possibility of Its Control by Si Insertion Layers" Physical Review. B50. 17242-17248 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Hashimoto: "Artificial control of heterojunction band discontinuities by two delta dopings" Proc.of Int.Symp.on Compound Semiconductors(San Diego,USA,1994)[to be published]. (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 斎藤敏夫: "InAs原子層を挿入したGaAs/AlAs界面の電子状態とバンド不連続量" 電子情報通信学会技術研究報告. ED94. 31-35 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 生駒俊明: "半導体ヘテロ界面におけるバンド不連続の人為的制御" 生産研究. 45. 787-790 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 斎藤敏夫: "(311)A GaAs/AlAsヘテロ界面のバンド不連続量の人工的制御" 電子情報通信学会技術研究報告. ED93. 53-57 (1993)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 橋本佳男: "半導体ヘテロ界面のバンド不連続量の測定とその制御" 応用物理. 63. 116-123 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ikoma, Y.Hashimoto, and T.Saito: "Artificial Control of Heterojunction Band Discontinuities" SEISAN-KENKYU [in Japanese]. 45. 21 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saito, Y.Hashimoto, and T.Ikoma: "Artificial Control of Band Discontinuity at (311) A GaAs/AlAs Heterointerface" Technical Report of IEICE.[in Japanese]. ED93-129, CPM93-100. (1993)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saito, Y.Hashimoto, and T.Ikoma: "Band Discontinuity and Effects of Si-Insertion Layr at (311) A GaAs/AlAs Interface" Solid-State Electronics. 37. 743 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Hashimoto, T.Saito, and T.Ikoma: "Determination and artificial control of hetero-junction band discontinuities" Oyo Buturi [in Japanese]. 63. 116 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saito, Y.Hashimoto, and T.Ikoma: "Band Discontinuity in GaAs/AlAs Superlattices with InAs Strained Insertion-Layrs" Superlattices and Microstructures. 15. 405 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saito, Y.Hashimoto, and T.Ikoma: "Band Discontinuity at the (311) A GaAs/AlAs Interface and Possibility of Its Control by Si Insertion Layrs" Phys.Rev.B50. 17242 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Saito, Y.Hashimoto, and T.Ikoma: "Electronic States and Band Discontinuities at GaAs/AlAs Interfaces with InAs Insertion Layrs" Technical Report of IEICE.[in Japanese]. ED94-83, CPM94-79. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Hashimoto, N.Sakamoto, K.Agawa, T.Saito, and T.Ikoma: "Artificial control of heterojunction band discontinuities by two delta dopings" Proc.of Int.Symp.on Compound Semiconductors, San Diego, USA. (to be published). (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1996-04-15  

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