1994 Fiscal Year Final Research Report Summary
Electronic states of site-controlled impurity layrs at semiconductor interfaces and its applications to control of band discontinuities
| Project/Area Number |
05650023
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
表面界面物性
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| Research Institution | Institute of Industrial Science, University of Tokyo. |
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Principal Investigator |
SAITO Toshio Univ.of Tokyo, IIS,Research Associate, 生産技術研究所, 助手 (90170513)
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| Co-Investigator(Kenkyū-buntansha) |
IKOMA Toshiaki T.I.Tsukuba R & D center, Director, 筑波研究開発センター, 取締役社長(研究職) (80013118)
HIRAKAWA Kazuhiko Univ.of Tokyo, IIS,Associate Prof., 生産技術研究所, 助教授 (10183097)
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| Project Period (FY) |
1993 – 1994
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| Keywords | hetero-junction / gallium arsenide / aluminum arsenide / band discontinuity / tight-binding method / silicon / photoelectron spectroscopy / face orientation |
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| Research Abstract |
1. To predict band discontinuities at hetero-interfaces theoretically, we constructed a program for the self-consistent tight-binding method with the sp^3s^* basis. In this method, the atomic orbital energies are modified with the induced electrostatic potentials calculated from the electronic charges at interfaces.
2. Using this program, we calculated valence-band discontinuities, DELTAE_v, at the GaAs/AlAs interfaces. The calculation gives DELTAE_v=0.51 eV at the (100) and (110) interfaces, and DELTAE_v=0.50 eV at the (311) A interface. DELTAE_v at the GaAs/AlAs interface is almost constant for various interface orientations, even for the high-index interfaces.
3. DELTAE_v at the GaAs/Si (2ML) /AlAs interface is calculated to be ; DELTAE_v=-1.36 eV [ (100)-As interface] , 2.1 eV [ (100)-Ga interface] , 0.35 eV [ (110) interface] , -0.12 eV [ (311) A-As interface] , and 1.67 eV [ (311) A-Ga interface] . DELTAE_v is determined by the Si-induced interface dipole and depends strongly on the interface orientations.
4. DELTAE_v at the (100) GaAs/InAs (1ML) /AlAs interface is calculated to be 0.50 eV,which is practically equal to DELTAE_v=0.51 eV at the GaAs/AlAs interface with no insertion-layrs. The insertion of the strained InAs monolayr changes the detail of valence charge density at the GaAs/AlAs interface but does not change DELTAE_v. The result of calculation is consistent with our experimental measurement for the MBE-grown samples.
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