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[Publications] F.Vazquez,K.Furuya and D.Kobayashi: "Detecting subsurface hot electrons with a scanning probe microscopy" J.Appl.Phys.79・2. 651-655 (1996)
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[Publications] H.Hongo,H.Tanaka,Y.Miyamoto,J.Yoshinaga,and K.Furuya: "Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs" Jpn.J.Appl.Phys.35・8A. L964〜L967 (1996)
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[Publications] F.Vazquez,D.Kobayashi,I.Kobayashi,Y.Miyamoto,K.Furuya,et.al.: "Detection of hot electron current with scanning hot electron microscopy" Appl.Phys.Lett.69・15. 2196-2198 (1996)
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[Publications] R.Takemura,M.Suhara,Y.Miyamoto,K.Furuya,and Y.Nakamura: "Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process" IEICE of Jpn.E-79C・11. 1525-1529 (1996)
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[Publications] H.Hongo,T.Hattori,Y.Miyamoto.K.Furuya,K.Matsunuma,et.al.: "Seventy nm pitch patterning on CaF2 by e-beam exposure:An inorganic resist and a contamination resist" Jpn.J.Appl.Phys.35・12. 6342-6343 (1996)
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[Publications] H.Ishikuro,T.Saraya,T.Hiramoto,and T.Ikoma: "Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures" Japanese Journal of Applied Physics. 35・2B. 858-860 (1996)
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[Publications] F.Wakaya,J.Takahara,S.Takaoka,K.Murase and K.Gamo: "Confinement Potential in an Asymmetrically Biased Quantum Point Contact" Jpn.J.Appl.Phys.35. 1329-1332 (1996)
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[Publications] F.Wakaya,T,Matsubara,H.Nakayama,J.Yanagisawa,Y.Yuba,S.Takaoka,K.Gamo: "Effects of grwth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures" Physica B. 227. 268-270 (1996)
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[Publications] J.Yanagisawa,H.Nakayama,F.Wakaya,Y.Yuba and K.Gamo: "Fabrication of Laterally Seiected Si Doped Layer in GaAs Using a Low-Energy Focused Ion Beam/Molecular Beam Epitaxy Combined System" to be published in J.Vac.Scl.Technol.B.
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[Publications] J.Yanagisawa,N.Onishi,H.Nakayama and K.Gamo: "Characterization of Directly Deposited Sillcon Films Using Low-Energy Focused Ion Beam" to be piblished in Jpn.J.Appl.Phys.19GA11:J.Yanagisawa,H.Nakayama,O.Matsuda,K.Murase and K.Gamo.
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[Publications] "Direct Deposition of Silicon and Silicon-Oxide Films Using Low-Energy Si Focused Ion Beam" to be published in Nucl.Instr.Methods B.
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[Publications] C.Kaneshiro,T.Okumura: "Nanofabrication on n-GaAs Surface by Scanning Tunneling Microscope in Ni-Salt Solution" Thin Solid Films. 281. 606-609 (1996)
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[Publications] H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Hiramoto,T.Ikoma: "Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire MOSFET Fabricated by Anisotropic Etching on a SIMOX Substrate" Applied Physics Letters. 68・25. 3585-3587 (1996)
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[Publications] T.Hiramoto,H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates" Physics B. 227. 95-97 (1996)
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[Publications] T.Hiramoto,H.Ishikuro,K.Saito,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Fabirication of Si Nano-Structures for Single Electrom Device Applications by Anisotropic Etching" Japanese Journal of Applied Physics. 35・12B. 6664-6667 (1996)
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[Publications] T.Someya,H.Akiyama,and H.Sakaki: "Enhanced Binding Energy of One-Dimensional Excitons in Quantum Wires" Physical Revew Letters. 76・16. 2965-2968 (1996)
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[Publications] H.Akiyama,T.Someya,and H.Sakaki: "Dimensional crossover and confinement-induced optical anisotropy in GaAs T-shaped quantum wires" Physical Review B. 53・16. 520-523 (1996)
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[Publications] G.Yusa and H.Sakaki: "Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structu" Applied.Physics.Letters.(to be published).
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[Publications] C.Kaneshiro,T.Okumura: "Fabrication of Mesoscopic Structures on n-GaAs Surfaces by Electro-chemical Scanning Electron Microscope" Phsica B. 227. 271-275 (1996)