1996 Fiscal Year Annual Research Report

半導体量子位相デバイス

Research Project

Project/Area Number	06238104
Research Institution	Tokyo Institute of Technology
Principal Investigator	古屋一仁東京工業大学, 工学部, 教授 (40092572)
Co-Investigator(Kenkyū-buntansha)	奥村次徳東京都立大学, 工学部, 教授 (00117699) 蒲生健次大阪大学, 基礎工学部, 教授 (70029445) 榊裕之東京大学, 先端科学技術研究センター, 教授 (90013226) 平本俊郎東京大学, 生産技術研究所, 助教授 (20192718) 生駒俊明テキサスインスツルメント, 研究員
Keywords	電子波回折 / 走査ホットエレクトロン顕微鏡 / シリコン量子構造 / T字形量子細線 / 一次元励起子 / InAs量子箱 / 集束イオンビーム注入 / 電解液中STM
Research Abstract	GalnAsOMVPEにより三重バリア電子波共振器を作製し共鳴エネルギー幅測定からバリスティック電子のコヒーレンス長推定方法を研究し、電子ビーム描画により回折観測用超微埋め込みスリットを作製し電子波回折観測を行い、走査ホットエレクトロン顕微鏡動作に初めて成功した(古屋)。VLSIプロセスと互換性をもつシリコン異方性エッチングにより、リソグラフィ限界を越える微細なT字、十字および単一ドット構造を作製し、シリコン量子デバイスとVLSIとの集積化の基礎を固めた(生駒)。同プロセスを用いて極微細MOSFETを作製し、室温および低温での単一電子現象を観測し、理論的考察から、チャネルが複数のドットに分裂し、熱励起型ホッピング伝導が支配的であることを明らかに、室温動作シリコン量子デバイス実現を一歩近づけた(平本)。へき開量子井戸構造端面(エッジ)上に量子井戸を成長させて交叉部にT字形量子細線を形成し、一次元励起子束縛エネルギーの増大、偏波依存性を見出し、自己形成InAs量子箱トラップを有するGaAs/AlGaAsヘテロFETを作製し単一電子正孔捕縛を観測した(榊)。真空一貫プロセス埋め込み量子構造作製をめざし結晶成長中断条件把握と低エネルギーFIBその場注入およびMBE再成長によりGaAs埋め込みデルタドープ層形成に成功し、ホールおよびCV測定により高移動度の電子系形成を確認した(蒲生)。電界液中でSTMを用いて、n-GaAs表面に対して、局所的なエッチングおよび金属折出を行い、表面酸化状態、不純物濃度および基板電位依存性を明らかにし、エッチングメカニズムが探針からのホール注入によることを明らかにした(奥村)。

Research Products
(19 results)

All Other

All Publications (19 results)

[Publications] F.Vazquez,K.Furuya and D.Kobayashi: "Detecting subsurface hot electrons with a scanning probe microscopy" J.Appl.Phys.79・2. 651-655 (1996)
[Publications] H.Hongo,H.Tanaka,Y.Miyamoto,J.Yoshinaga,and K.Furuya: "Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs" Jpn.J.Appl.Phys.35・8A. L964〜L967 (1996)
[Publications] F.Vazquez,D.Kobayashi,I.Kobayashi,Y.Miyamoto,K.Furuya,et.al.: "Detection of hot electron current with scanning hot electron microscopy" Appl.Phys.Lett.69・15. 2196-2198 (1996)
[Publications] R.Takemura,M.Suhara,Y.Miyamoto,K.Furuya,and Y.Nakamura: "Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process" IEICE of Jpn.E-79C・11. 1525-1529 (1996)
[Publications] H.Hongo,T.Hattori,Y.Miyamoto.K.Furuya,K.Matsunuma,et.al.: "Seventy nm pitch patterning on CaF2 by e-beam exposure:An inorganic resist and a contamination resist" Jpn.J.Appl.Phys.35・12. 6342-6343 (1996)
[Publications] H.Ishikuro,T.Saraya,T.Hiramoto,and T.Ikoma: "Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures" Japanese Journal of Applied Physics. 35・2B. 858-860 (1996)
[Publications] F.Wakaya,J.Takahara,S.Takaoka,K.Murase and K.Gamo: "Confinement Potential in an Asymmetrically Biased Quantum Point Contact" Jpn.J.Appl.Phys.35. 1329-1332 (1996)
[Publications] F.Wakaya,T,Matsubara,H.Nakayama,J.Yanagisawa,Y.Yuba,S.Takaoka,K.Gamo: "Effects of grwth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures" Physica B. 227. 268-270 (1996)
[Publications] J.Yanagisawa,H.Nakayama,F.Wakaya,Y.Yuba and K.Gamo: "Fabrication of Laterally Seiected Si Doped Layer in GaAs Using a Low-Energy Focused Ion Beam/Molecular Beam Epitaxy Combined System" to be published in J.Vac.Scl.Technol.B.
[Publications] J.Yanagisawa,N.Onishi,H.Nakayama and K.Gamo: "Characterization of Directly Deposited Sillcon Films Using Low-Energy Focused Ion Beam" to be piblished in Jpn.J.Appl.Phys.19GA11:J.Yanagisawa,H.Nakayama,O.Matsuda,K.Murase and K.Gamo.
[Publications] "Direct Deposition of Silicon and Silicon-Oxide Films Using Low-Energy Si Focused Ion Beam" to be published in Nucl.Instr.Methods B.
[Publications] C.Kaneshiro,T.Okumura: "Nanofabrication on n-GaAs Surface by Scanning Tunneling Microscope in Ni-Salt Solution" Thin Solid Films. 281. 606-609 (1996)
[Publications] H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Hiramoto,T.Ikoma: "Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire MOSFET Fabricated by Anisotropic Etching on a SIMOX Substrate" Applied Physics Letters. 68・25. 3585-3587 (1996)
[Publications] T.Hiramoto,H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates" Physics B. 227. 95-97 (1996)
[Publications] T.Hiramoto,H.Ishikuro,K.Saito,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Fabirication of Si Nano-Structures for Single Electrom Device Applications by Anisotropic Etching" Japanese Journal of Applied Physics. 35・12B. 6664-6667 (1996)
[Publications] T.Someya,H.Akiyama,and H.Sakaki: "Enhanced Binding Energy of One-Dimensional Excitons in Quantum Wires" Physical Revew Letters. 76・16. 2965-2968 (1996)
[Publications] H.Akiyama,T.Someya,and H.Sakaki: "Dimensional crossover and confinement-induced optical anisotropy in GaAs T-shaped quantum wires" Physical Review B. 53・16. 520-523 (1996)
[Publications] G.Yusa and H.Sakaki: "Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structu" Applied.Physics.Letters.(to be published).
[Publications] C.Kaneshiro,T.Okumura: "Fabrication of Mesoscopic Structures on n-GaAs Surfaces by Electro-chemical Scanning Electron Microscope" Phsica B. 227. 271-275 (1996)

1996 Fiscal Year Annual Research Report

半導体量子位相デバイス

Principal Investigator

古屋 一仁 東京工業大学, 工学部, 教授 (40092572)

Research Products

[Publications] F.Vazquez,K.Furuya and D.Kobayashi: "Detecting subsurface hot electrons with a scanning probe microscopy" J.Appl.Phys.79・2. 651-655 (1996)

[Publications] H.Hongo,H.Tanaka,Y.Miyamoto,J.Yoshinaga,and K.Furuya: "Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs" Jpn.J.Appl.Phys.35・8A. L964〜L967 (1996)

[Publications] F.Vazquez,D.Kobayashi,I.Kobayashi,Y.Miyamoto,K.Furuya,et.al.: "Detection of hot electron current with scanning hot electron microscopy" Appl.Phys.Lett.69・15. 2196-2198 (1996)

[Publications] R.Takemura,M.Suhara,Y.Miyamoto,K.Furuya,and Y.Nakamura: "Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process" IEICE of Jpn.E-79C・11. 1525-1529 (1996)

[Publications] H.Hongo,T.Hattori,Y.Miyamoto.K.Furuya,K.Matsunuma,et.al.: "Seventy nm pitch patterning on CaF2 by e-beam exposure:An inorganic resist and a contamination resist" Jpn.J.Appl.Phys.35・12. 6342-6343 (1996)

[Publications] H.Ishikuro,T.Saraya,T.Hiramoto,and T.Ikoma: "Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures" Japanese Journal of Applied Physics. 35・2B. 858-860 (1996)

[Publications] F.Wakaya,J.Takahara,S.Takaoka,K.Murase and K.Gamo: "Confinement Potential in an Asymmetrically Biased Quantum Point Contact" Jpn.J.Appl.Phys.35. 1329-1332 (1996)

[Publications] F.Wakaya,T,Matsubara,H.Nakayama,J.Yanagisawa,Y.Yuba,S.Takaoka,K.Gamo: "Effects of grwth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures" Physica B. 227. 268-270 (1996)

[Publications] J.Yanagisawa,H.Nakayama,F.Wakaya,Y.Yuba and K.Gamo: "Fabrication of Laterally Seiected Si Doped Layer in GaAs Using a Low-Energy Focused Ion Beam/Molecular Beam Epitaxy Combined System" to be published in J.Vac.Scl.Technol.B.

[Publications] J.Yanagisawa,N.Onishi,H.Nakayama and K.Gamo: "Characterization of Directly Deposited Sillcon Films Using Low-Energy Focused Ion Beam" to be piblished in Jpn.J.Appl.Phys.19GA11:J.Yanagisawa,H.Nakayama,O.Matsuda,K.Murase and K.Gamo.

[Publications] "Direct Deposition of Silicon and Silicon-Oxide Films Using Low-Energy Si Focused Ion Beam" to be published in Nucl.Instr.Methods B.

[Publications] C.Kaneshiro,T.Okumura: "Nanofabrication on n-GaAs Surface by Scanning Tunneling Microscope in Ni-Salt Solution" Thin Solid Films. 281. 606-609 (1996)

[Publications] H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Hiramoto,T.Ikoma: "Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire MOSFET Fabricated by Anisotropic Etching on a SIMOX Substrate" Applied Physics Letters. 68・25. 3585-3587 (1996)

[Publications] T.Hiramoto,H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates" Physics B. 227. 95-97 (1996)

[Publications] T.Hiramoto,H.Ishikuro,K.Saito,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Fabirication of Si Nano-Structures for Single Electrom Device Applications by Anisotropic Etching" Japanese Journal of Applied Physics. 35・12B. 6664-6667 (1996)

[Publications] T.Someya,H.Akiyama,and H.Sakaki: "Enhanced Binding Energy of One-Dimensional Excitons in Quantum Wires" Physical Revew Letters. 76・16. 2965-2968 (1996)

[Publications] H.Akiyama,T.Someya,and H.Sakaki: "Dimensional crossover and confinement-induced optical anisotropy in GaAs T-shaped quantum wires" Physical Review B. 53・16. 520-523 (1996)

[Publications] G.Yusa and H.Sakaki: "Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structu" Applied.Physics.Letters.(to be published).

[Publications] C.Kaneshiro,T.Okumura: "Fabrication of Mesoscopic Structures on n-GaAs Surfaces by Electro-chemical Scanning Electron Microscope" Phsica B. 227. 271-275 (1996)

古屋一仁東京工業大学, 工学部, 教授 (40092572)