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1995 Fiscal Year Final Research Report Summary

Realization of disordered quantum wire semicondctors

Research Project

Project/Area Number 06402039
Research Category

Grant-in-Aid for General Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

SASAKI Akio  Kyoto Univ., Graduate School of Eng., Professer, 工学研究科, 教授 (10025900)

Co-Investigator(Kenkyū-buntansha) WAKAHARA Akihiro  Kyoto Univ., Graduate School of Eng..Res.Ass., 工学研究科, 助手 (00230912)
Project Period (FY) 1994 – 1995
Keywordsdisorder superlattices / luminescence / quantum effects / step-flow mode
Research Abstract

1.Relationship between growth conditions and step-flow growth mode for AlGaP growth on GaP vicinal substrates have investigated to achieve disordered quantum wire structure using step-flow growth mode on vicinal substrates.
2.Step-flow growth of AlP and GaP on GaP vicinal substrates without step-bunching which disturb the quantum wire structure have demonstrated.
3.AlP/GaP superlattices have grown on GaP vicinal substrates using step-flow growth mode. Photoluminescence properties of the superlattices have investigated.
4.It has shown that residual concentration of oxygen impurity which acts as a non-radiative recombination center in AlGaP epi-layr can be reduced one order of magnitude by through tertiarybutylphosphine, which is phosphorus source, into AlGaIn metal bubbler.
5.In addition to the investigation of growth of disordered quantum wire using step-flow mode, growth of quantum wire structure by aligning self-assembled quantum dots by which enhancement of the quantum effect is expected. InP 3D structure without any dislocations have realized by using Stranski-Krastanov growth mode on GaP substrate.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] A. Sasaki: "Photoluminescence properties of AlGaP of superlattices," Mat. Sci. & Eng.B35. 454-458 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Sasaki: "Disordered superlattices" Mat. Sci. & Eng.B35. 278-283 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Sasaki: "Photoluminescence thermal-quenching and carrier localaizationof AlGaP disordered superlattices" J. Appl. Phys.77. 4693-4700 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Sasaki: "Ge composision dependence of photoluminescence properties of Si_<1-X>Ge_X/Si disordered superlattices" Mat. Sci. & Eng.B35. 479-484 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Sasaki: "Photoluminescence properties of AlAs/GaAs disordered superlattices with fixed GaAs or AlAs layer thickness" Mat. Sci. & Eng.B35. 406-409 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A. Wakahara: "Organometallic vapor phase epitaxial growth of AlP/GaP monolayer superlattices using tertiarybutylphosphine" Appl. Phys. Lett.65. 2096-2098 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Sasaki: "Photoluminescence properties of AlGaP of superlattices" Mat.Sci.& Eng.No.1335. 454-458 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki: "Disordered superlattices" Mat.Sci.& Eng.No.1335. 278-283 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki: "Photoluminescence thermal-quenching and carrier localaization of AlGaP disordered superlattices" J.Appl.Phys.No.77. 4693-4700 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki: "Ge composision dependence of photoluminescence properties of Si_<1-xG>e_x/Si disordered Superlattices" Mat.Sci.& Eng.No.1335. 479-484 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Sasaki: "Photoluminescence properties of AlAs/GaAs disordered superlattices with fixed GaAs or AlAs layr thickness." Mat.Sci.& Eng.No.B35. 406-409 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Wakahara: "Organometallic vapor phase epitaxial growth of AlP/GaP monolayr superlattice using tertiarybutylphosphine" Appl.Phys.Lett.No.65. 2096-2098 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1997-03-04  

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