1996 Fiscal Year Final Research Report Summary
Synthesis and growth mechanism of diamond and cubic boron nitride
| Project/Area Number |
06403016
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
FUKUNAGA Osamu Tokyo Institute of Technology, Faculty of Engineering, Professor, 工学部, 教授 (20199251)
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| Co-Investigator(Kenkyū-buntansha) |
OHASHI Naoki Tokyo Institute of Technology, Faculty of Engineering, Research Associate, 工学部, 助手 (60251617)
TSURUMI Takaaki Tokyo Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (70188647)
IKAWA Hiroyuki Kanagawa Institute of Technology, Faculty of Engineering, Professor, 工学部, 教授 (30016612)
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| Project Period (FY) |
1994 – 1996
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| Keywords | diamond cubic / boron nitride / high pressure synthesis / solvent growth / nitrogen in diamond / nitrogen getting elements / recrystalization / threshold pressure |
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| Research Abstract |
On the formation and growth mechanism of diamond and cubic BN carried out in the present study will be summarized.In the present study, we used metal alloy solvents such as Ni, Ni-Ti, Ni-Nb, Fe-B,Fe-Co and Fe-Co-Ti used for diamond synthesis and growth experiments. Alkali and alkaline earth boron nitride compound such as CaLiBN2 was used as solvent for cBN growth.
Nitrogen, which is a major impurity in diamond, can be eliminated by the addition of getter element such as Ti, Zr and Nb. However, few studies have been reported on the mechanism of the nitrogen gettering. Content of nitrogen in the diamond crystals decreased greatly by adding higher Ti content or growth at higher temperature. The content of nitrogen decreased remarkably when we use Fe-Co Ti alloy as solvent.
We developed growth method of high pure diamond utilized recrystallization process of diamond on the seed crystal.
Crystal structure analysis of CaLiBN_2 which used as solvent of cBN growth suggested that Li and N defect are present in the structure and these defects plays possible role of decreasing threshold pressure of the cBN formation.
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