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1996 Fiscal Year Final Research Report Summary

STUDY ON GROWTH AND MATERIAL PROPERTIES OF METASTABLE NITRIDE ALLOY SEMICONDUCTORS

Research Project

Project/Area Number 06452107
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTHE UNIVERSITY OF TOKYO

Principal Investigator

ONABE Kentaro  GRADUATE SCHOOL OF ENGINEERING,THE UNIVERSITY OF TOKYO PROFESSOR, 大学院・工学系研究科, 教授 (50204227)

Co-Investigator(Kenkyū-buntansha) YAGUCHI Hiroyuki  GRADUATE SCHOOL OF ENGINEERING,THE UNIVERSITY OF TOKYO RESEARCH ASSOCIATE, 大学院・工学系研究科, 助手 (50239737)
KONDO Takashi  GRADUATE SCHOOL OF ENGINEERING,THE UNIVERSITY OF TOKYO RESEARCH ASSOCIATE, 大学院・工学系研究科, 助手 (60205557)
OSADA Toshihito  RESEARCH CENTER OF ADVANCED SCIENCE AND TECHNOLOGY,THE UNIVERSITY OF TOKYO ASSOC, 先端科学技術研究センター, 助教授 (00192526)
SHIRAKI Yasuhiro  RESEARCH CENTER OF ADVANCED SCIENCE AND TECHNOLOGY,THE UNIVERSITY OF TOKYO PROFE, 先端科学技術研究センター, 教授 (00206286)
ITO Ryoichi  GRADUATE SCHOOL OF ENGINEERING,THE UNIVERSITY OF TOKYO PROFESSOR, 大学院・工学系研究科, 教授 (40133102)
Project Period (FY) 1994 – 1996
KeywordsNITRIDE ALLOY SEMICONDUCTOR / GaPN ALLOY / WIDEGAP COMPOUND SEMICONDUCTOR / METASTABLE ALLOY SEMICONDUCTOR / GALLIUM PHOSPHIDE / GALLIUM NITRADE / METALORGANIC VAPOR PHASE EPITAXY / MOVPE
Research Abstract

Growth and material properties of nitride alloy semiconductors of the type III-V-N,where GaPN alloy is the representative, have been investigated. This group of alloy semiconductors had been hard to grow due to their extreme immiscibility. The present research project achieved the following major results, which will lead to new technological applications.
1.Growth of GaPN Alloys : The growth characteristics of GaPN alloy by metalorganic vapor phase epitaxy using dimethylhydrazine have been clarified. The alloy composition is much affected by the desorption of N atom species from growing surface. Based on these growth characteristics, GaPN alloys with the N concentration as much as 6% have been successfully attained.
2.The Origin and Property of Radiative Levels : From optical measurements and analyzes like absorption, photoluminescence and excitation spectroscopies, the radiative levels have been found to originate from the quasi-localized levels formed in the density-of-states tails at the band edge. The relaxation process of excited carriers at low temperatures is governed by the radiative transitions via N-N pair levels for N concentrations below 1%, and by the relaxation to nonradiative and then to quasi-localized radiative levels for the N concentrations above 1%.
3.Evolution of Band Edge with Increasing N Concentration : It has been that the band edge of GaPN alloys originates from the isolated-N levels in the host GaP crystal. The behavior of mobility edge for quasi-localized excitons has been clarified. These findings are much consistent with a theoretical calculation for the energy bands based on the tight-binding method, and suggest that the huge bowing in the composition dependence of the GaPN energy gap is an intrinsic property of GaPN as well as other related nitride alloys such as GaAsPN and InGaPN.

  • Research Products

    (31 results)

All Other

All Publications (31 results)

  • [Publications] H.Yaguchi 他: ""Nitrogen Concentration Dependence of Photoluminescence Decay Time in GaP_<1-X>N_X Alloys"" Solid State Electron.41. 231-233 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi 他: ""Photoluminescence Excitation Spectroscopy of GaP_<1-X>N_X Alloys : Conduction Band Edge Formation by Nitrogen Incorporation"" J.Cryst.Growth. 170. 353-356 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi 他: ""Time-resolved photoluminesccnce study of radiative transition proccsses in GaP_<1-X>N_X alloys"" Inst.Phys.Conf.Ser.145. 307-312 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Miyoshi and K.Onabe: "SEMI-EMPIRICAL TIGHT-BINDING CALCULATION OF THE ELECTRONIC STURUCTURE OF GaP_<1-X>N_X (x=0.25,0.5,0.75) ALLOYS" Solid State Electron.41. 267-269 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Onabe: "MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF GaPN METASTABLE ALLOY SEMICONDUCTORS" MRS Conf.Proc."III-V Nitrides". 449(to be published). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi 他: "Photoluminescence Excitation Spectroscopy of Gap_<1-X>N_X Alloys" 15th Electronic Materials Symposium. 53-56 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Miyoshi 他: "Growth Parameters for Metastable Gap_<1-X>N_X Alloys in MOVPE" Inst.Phys.Conf.Ser.141. 97-100 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi 他: "Time-resolved Photoluminescence Study of GaP_<1-X>N_X Alloys" 14th Electronic Materials Symposium. 53-54 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi 他: "Time-resolved photoluminescence study of radiative transition processes in GaP_<1-X>N_X Alloys" Inst.Phys.Conf.Ser.145. 307-312 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Miyoshi 他: "Semi-empirical Tight-binding Calculation of the Electronic Structure of Gap_<1-X>N_X (x=0.25,0.5,0.75) Alloys" Topical Workshop on III-V Nitrides. A-1 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi 他: "Nitrogen Concentration Dependence of Photoluminescence Decay Time in GaP_<1-X>N_X Alloys" Topical Workshop on III-V Nitrides. G-7 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Miyoshi 他: "MOVPE Growth of Strained GaP_<1-X>N_X/GaP Quantum Wells" Inst.Phys.Conf.Ser.136. 637-642 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Miyoshi 他: "Intermediate Range Between N-Doped GaP and GaP_<1-X>N_X Alloys : Difference in OPtical Properties" J.Cryst.Growth. 145. 87-97 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Miyoshi 他: "Intermediate Range Between N-Doped GaP and GaP_<1-X>N_X Alloys : Difference in OPtical Properties" 13th Symposium Record on Alloy Semiconductor Physics and Electronics. 95-98 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 尾鍋研太郎 他: "準安定混晶GaAsN、GaPNのMOVPE成長" 日本学術振興会薄膜第131委員会 第170回研究会資料. 1-6 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 尾鍋研太郎: "立方晶GaNとGaPN混晶の有機金属気相成長" 応用物理. 63. 156-160 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 尾鍋研太郎 他: "物性科学事典" (株)丸善, 1194 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Yaguchi: ""Nitrogen Concentration Dependence of Photoluminescence Decay Time in GaP_<1-x>N_x Alloys"" Solid State Electron.41. 231-233 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Yaguchi: ""Photoluminescence Excitation Spectroscopy of GaP_<1-x>N_x Alloys : Conduction Band Edge Formation by Nitrogen Incorporation"" J.Cryst.Growth. 170. 353-356 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Yaguchi: ""Time-Resolved Photoluminescence Study of Radiative Transition Processes in GaP_<1-x>N_x Alloys"" Inst.Phys.Conf.Ser.145. 307-312 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Miyoshi: ""Semi-Empirical Tight-Binding Calculation of the Electronic Structure of GaP_<1-x>N_x(x=0.25,0.5,0.75)Alloys"" Solid State Electron. 41. 267-269 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Onabe: ""MOVPE Growth and Optical Characterization of GaPN Metastable Alloy Semiconductors"" MRS Conf.Proc.449, "III-V Nitrides". (to be published). 1997

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Yaguchi: ""Photoluminescence Excitation Spectroscopy of GaPl-xNx Alloys"" 15th Electronic Materials Symposium. 53-56 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Miyoshi: ""Growth Parameters for Metastable GaP1-xNx Alloys in MOVPE"" Inst.Phys.Conf.Ser.141. 97-100 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Yaguchi: ""Time-resolved Photoluminescence Study of GaPl-xNx Alloys"" 14th Electronic Materials Symposium. 53-54 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Miyoshi: ""Semi-Empirical Tight-binding Calculation of the Electronic Structure of GaP_<1-x>N_x(x=0.25,0.5,0.75)Alloys"" Topical Workshop on III-V Nitrides. A-1. (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Yaguchi: ""Nitrogen Concentration Dependence of Photoluminescence Decay Time in GaP_<1-x>N_x Alloys"" Topical Workshop on III-V Nitrides. G-7. (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Miyoshi: ""MOVPE Growth of Strained GaP_<1-x>N_x/GaP Quantum Wells"" Inst.Phys.Conf.Ser.136. 637-642 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Miyoshi: ""Intermediate Range Between N-Doped GaP and GaPl-xNx Alloys : Difference in Optical Properties"" J.Cryst.Growth. 145. 87-97 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Miyoshi: ""Intermediate Range Between N-Doped GaP and GaPl-xNx Alloys : Difference in Optical Properties"" 13th Symposium Record on Alloy Semiconductor Physics and Electronics.

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Onabe: ""MOVPE Growth of Cubic GaN and GaPN Alloys"(in Japanese)" Oyo-Butsuri. 63. 156-160 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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