1995 Fiscal Year Final Research Report Summary
Study of Nitrogen Doping of ZnSe by Catalysis of Transition Metals
| Project/Area Number |
06452109
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KONAGAI Makoto Department of Electrical and Electronic Engineering, Tokyo Institute of Technology Professor, 工学部, 教授 (40111653)
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| Co-Investigator(Kenkyū-buntansha) |
OKAMOTO Tamotsu Research Center for Quantum Effect Electronics, Tokyo Institute of Technology Re, 量子効果エレクトロニクス研究センター, 助手 (80233378)
YAMADA Akira Department of Electrical and Electronic Engineering, Tokyo Institute of Technolo, 工学部, 助教授 (40220363)
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| Project Period (FY) |
1994 – 1995
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| Keywords | II-VI compound semiconductors / ZnSe / molecular beam epitaxy / nitrogen doping |
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| Research Abstract |
Recent developments in ZnSe-based optical devices greatly owe to p-type ZnSe prepared with a nitrogen RF plasma source. In the plasma process, doping of nitrogen is achieved by an active nitrogen. In this study, we proposed the use of dissociative adsorption of N_2 on transition metals (catalytic reaction) as a new nitrogen doping technique during MBE growth of ZnSe instead of using RF plasma.
First, we investigated the effect of high-temperature tungsten (W) filament on nitrogen doping of ZnSe. In the PL spectra of N-doped ZnSe films with heating the W filament above 1300ﾟC,DAP emission was clearly observed, showing that nitrogen was effectively incorporated into ZnSe by the effect of the heated tungsten. However, the N-doped ZnSe films exhibited high resistivity.
Furthemore, we investigated the effect of heated Fe and it was found that nitrogen was effectively incorporated into ZnSe by the effect of the heated Fe at 300ﾟC.However, the N-doped ZnSe films exhibited high resistivity.
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