1995 Fiscal Year Final Research Report Summary
Characterization of micro-defects at semiconductor hetero-interfaces with FT-Raman and infrared monochrometers.
| Project/Area Number |
06452117
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
表面界面物性
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| Research Institution | The University of Tokyo |
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Principal Investigator |
KATODA Takashi The University of Tokyo, The Division of Engineering, The Graduate School, Associate Profesor., 大学院・工学系研究科, 助教授 (90013739)
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| Co-Investigator(Kenkyū-buntansha) |
KISHI Masato The University of Tokyo, The Division of Engineering, The Graduate School, Assis, 大学院・工学系研究科, 助手 (00150285)
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| Project Period (FY) |
1994 – 1995
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| Keywords | FT-Raman / FT-IR / Hetero-interface / Micro-defects |
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| Research Abstract |
We proposed characterization of micro-defects at semiconductor interfaces with FT-Raman and infrared monochrometes. We measured photoluminescence spectra using a FT-Raman monochrometer and oxygen contents based on infrared absorption. Photoluminescence spectra could be obtained with a high sensitivity in our method.
At first, we characterized micro-defects in CZ silicon before forming hetero-interfaces. Following results were obtained.
1) A photoluminescence peak was observed at 0.85eV after annealings at 500ﾟC and 650ﾟC.An origin of the peak is related to oxygen precipitates which grow over the critical size by annealing at a temperature higher than 110ﾟC.
2) Oxygen precipitates with a variety of sizes are formed by annealing at 500ﾟC while oxyzen precipitates with a large size are formed by annealing at 1280ﾟC.
3) Oxyzen precipitates with a large size formed by annealings at 500 and 650ﾟC are more stable than those formed by annealing at 1280 and 650ﾟC.On the other hand, oxygen precipitates with a small size formed by annealings at 500 and 650ﾟC are more unstable than those formed by annealing at 1280 and 650ﾟC.
The normalized intensity of the peak due to the ozygen precipitates in the photoluminescence spectra is related to the amount of precipitated oxygen.
Following to the characterization discussed avobe, we formed a hetero-interface by despositing a film of silicon nitride on the surface of CZ silicon. Stress in silicon near the hetero-interface was characterized by Raman spectroscopy and micro-defects were characterized as described above. As a result, compressive stress was acumulated in the silicon near the hetero-interface and a density of the micro-defects was smaller than those in silicon without stress.
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