1995 Fiscal Year Final Research Report Summary
Microtribological Properties of Singlecrystal Silicon and Silicondioxide Layr
| Project/Area Number |
06452165
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
設計工学・機械要素・トライボロジー
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| Research Institution | The University of Tokyo |
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Principal Investigator |
KATO Takahisa The University of Tokyo, Eng., Associate Prof., 大学院・工学系研究科, 助教授 (60152716)
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| Co-Investigator(Kenkyū-buntansha) |
FUKUDA Katsumi The University of Tokyo, Eng., Assistant, 大学院・工学系研究科, 助手 (20134471)
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| Project Period (FY) |
1994 – 1995
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| Keywords | Singlecrystal Silicon / Microtribology / Ultramicro Hardness / Dynamic Ultramicro Hardness of High Temperature / Silicondioxide |
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| Research Abstract |
With the developement of micro fabrication, singlecrystal silicon has been used in many microelements such as micromachines. The aim of this research is to clarify the microtribological properties of synglecrystal siliconand to improve their characteristics by siliocondioxide over coat. First of all micro hardness of the surfce of singlecrystal silicon is measured by using a dynamic hardness tester. The relation between the indentation load and indentation depth is measured under the usual environment and under ultra high temperature. The specimen used in this experiment is singlecrystal silicon of (1,1,1) and with a ovre coat of silicondioxide. Thickness of silicondioxide is 988 nm wich is coated by plazma CVD method. Temperature is varied from room temperature to 800 deg. It is found that (1) dynamic hardness is small when the surface is coated by silicondioxide, (2) dynamic hardness is small when the indentation is small and (3) dynamic hardness becomes maximum at 300-400 deg (C).
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Research Products
(12 results)
