1995 Fiscal Year Final Research Report Summary
Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic Properties
| Project/Area Number |
06452208
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
MOTOHISA Junichi Hokkaido University, Research Center for Interface Quantum Electronics, Associate Professor, 量子界面エレクトロニクス研究センター, 助教授 (60212263)
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| Co-Investigator(Kenkyū-buntansha) |
SAITOH Toshiya Hokkaido University, Research Center for Interface Quantum Electronics, Associat, 量子界面エレクトロニクス研究センター, 助教授 (70241396)
SAWADA Takayuki Hokkaido Institute of Technology, Dept. Applied Electronics., Professor, 工学部, 教授 (40113568)
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| Project Period (FY) |
1994 – 1995
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| Keywords | Semiconductor / Patterned Substrate / Vicinal Substrate / Crystal Growth / Multiatomic Step / Quantum Dot / Lateral Surface Superlattice / Electron Interference |
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| Research Abstract |
The objective of the present research is to realize semiconductor quantum nanostructures with controlled interfaces by utilizing the self-organized nature of the crystal growth. In particular, various types of quantum nanostructures were fabricated by metal-organic vapor phase epitaxial growth (MOVPE) growth on patterned substrates or on vicinal substrates. The main results are listed below.
(1) We studied on a growth process on patterned GaAs (001) substrate during metal-organic vapor phase epitaxy (MOVPE) and a novel approach for the fabrication of AlGaAs/GaAs quantum dot (QD) structures. The patterned substrate have an array of holes on the surface and those holes are partially filled with GaAs by MOVPE growth, followed by GaAs/AlGaAs quantum well structures. Detailed investigation on growth process on such patterned substrates revealed the presence of complicated two-dimensional migration of Ga and Al between different facets. Formation of GaAs dots was directly confirmed by spatially resolved cathodoluminescence measurements.
(2) We propose a new, lateral surface superlattice (LSSL) type of electron interference devices, where the period of LSSL is typically 60nm, by utilizing multiatomic steps on a vicinal GaAs (001) surface. Conductivity of the device is theoretically studied by taking the effect of randomness in the LSSL into account. We also investigate its drain and transconductance characteristics experimentally at low temperatures, and found clear oscillations in gm-V_G characteristics, which were ascribed to the electron interference effect.
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