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1996 Fiscal Year Final Research Report Summary

Fabrication of Multi-Layred Thin Film Structure by Photo-induced Catalytic Reactions of Organometallic Compounds

Research Project

Project/Area Number 06452210
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

NIWANO Michio  Tohoku University, Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 (20134075)

Co-Investigator(Kenkyū-buntansha) ENTA Yoshiharu  Tohoku University, Research Institute of Electrical Communication, Assistant, 電気通信研究所, 助手 (20232986)
Project Period (FY) 1994 – 1996
KeywordsPhoto-induced catalytic reaction / Organometallic compound / Ultra-thin film / Ultraviolet light / Synchrotron radiation / Layred structure / Photodecomposition
Research Abstract

We have investigated a method of fabricating multi-layred ultra-thin film structure by photoinduced catalytic reactions of organomatallic compounds on solid surfaces. We utilized ultraviolet (UV) and vacuumultraviolet (VUV) lights as the exciting light source.
We have investigated the photo-induced reactions of organic compounds such as tetramethylsilane (TMS) and its hydrogen-sustitued compounds which take place on Si surfaces. These compounds are precurcers for wide-gap semiconductor silicon carbide, SiC.We confirmed that amorphous SiC is formed on the Si surface by the photodecomposition and subsequent photopolymerization of TMS.We also demonstrated with IR measurements that the C-H bonds of TMS are decomposed by VUV irradiation through two reaction pathways : one is the primary photodecomposition and the other is the secondary process in which photofragments react with TMS.
The metal/GaAs interface reaction which occurs during the deposition of metals on GaAs have been investigated using synchrotron-radiation photoemission spectroscopy, x-ray diffraction, and Rutherford backscattering spectroscopy. We found that diffusion and aggregation of metal atoms at the metal/GaAs interface proceeds in different manners depending on the metal deposited and the surface chemical state of the GaAs substrate. We also revealed that CaF_2 epitaxially grows on the sulfur-treated GaAs surface, while the traditional acid treatment of the surfaceleads to formation of amorphous CaF_2

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] K.Kinashi et al.: "UV-Assisted Deposition of TEOS SiO2 Film Using Spin-Coating Method" Appl.Surf.Sci.79/80. 332-337 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Niwano et al.: "Infrared Spectroscopic Study of Initial Stages of Ultraviolet Ozone Oxidation of Si(100)and(111)Surfaces" Journal of Vacuum science & Technology. A12. 465-470 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Niwano et al.: "UV-Induced Deposition of SiO2 Film from TEOS Spin-Coated on Si" J.Electrochem.Soc.141. 1556-1561 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Niwano et al.: "Synchrotron Radiation Induced Reactions of Tetraethoxysilane on Si" J.Appl.Phys.75. 7304-7309 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kinashi et al.: "Synchrotron Radiation Induced Reactions of a Condensed Layer of Silicon Alkoxide on Si" J.Vac.Sci.Technol.A13. 1879-1884 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Niwano et al.: "Synchrotron Radiation Induced Reactions of Condensed Layer of Organosilicon Compounds" J.Electron Spectr.Related Phenomenon. 80. 89-92 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Shoji et al.: "Low-temperature epitaxial growth of CaF2 on(NH4)2Sx-treated GaAs(100)surface" Applied Surface Science. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kinashi, M.Niwano, and N.Miyamoto: "UV-Assisted Deposition of TEOS SiO2 Film Using Spin-Coating Method"" Appl.Surf.Sci.Vol.79/80. 332-337 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Niwano, J.Kageyama, K.Kinashi, and N.Miyamoto: "Infrared Spectroscopic Study of Initial Stages of Ultraviolet Ozone Oxidation of Si (100) and (111)" J.Vac.Sci.Technol. Vol.12, No2. 465-470 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Niwano, K.Kinashi, K.Saito, N.Miyamoto, and K.Honma: "UV-Induced Deposition of SiO2 Film from TEOS Spin-Coated on Si" J.Electrochem.Soc.Vol.141, No6. 1556-1561 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Niwano, J.K.Simons, S.P.Frigo, and R.A.Rosenberg: "Synchrotron Radiation Induced Reactions of Tetraethoxysilane on Si" J.Appl.Phys.Vol.175, No611. 7304-7309 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kinashi, M.Niwano, J.Sawahata, F.Shimoshikiryo, and N.Miyamoto: "Synnchrotron Radiation Induced Reactions of a Condensed Layr of Silicon Alkoxide on Si" J.Vac.Sci.Technol.Vol.A13, No4. 1879-1884 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Niwano, J.Sawahata, T.Miura, D.Shoji, and N.Miyamoto: "Synchrotron Radiation Induced Reactions of Condensed Layr of Organosilicon Compounds" J.Electron Spectr.Related Phenomenon. Vol.80. 89-92 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Shoji, M.Niwano, and N.Miyamoto: "Low-temperature epitaxial growth of CaF2 on (NH4) 2Sx-treated GaAs (100) surface" Appl.Surf.Sci.(in press).

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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