1995 Fiscal Year Final Research Report Summary
Development of Spin Valve type of Static Memory Devices using GMR Effect
| Project/Area Number |
06452213
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | TOKYO INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
NAOE Masahiko Tokyo Institute of Technology, Faculty of Engineering, Professor, 工学部, 教授 (40016465)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUSHITA Nobuhiro Tokyo Institute of Technology, Faculty of Engineering, Research Associate, 工学部, 助手 (90229469)
NAKAGAWA Shigeki Tokyo Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (60180246)
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| Project Period (FY) |
1994 – 1995
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| Keywords | GMR effect / Spin valve / Ion irradiation / Control of Interface / Dual ion beam sputtering |
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| Research Abstract |
The giant magnetic multilayrs composed of Ni-Fe and Cu layrs whose thickness were from 10 to 35 A each were deposited on Fe buffer layr by using the dual ion beam sputtering apparatus. Assist ions were radiated to the interfaces between Ni-Fe and Cu layr and the change of giant magneto-resistance (GMR) effect on sub ion assist voltage V_<sub> from 0 to 350 V was investigated. Although the amplitude of magneto-resistivity (MR) ratio was slightly decreased, the field sensitivity of magneto-resistance was fairly improved by ion assist radiation and took the maximum value at V_<sub> of 160 V.
Since Fe-Mn layr, which is commonly deposited on top of the multilayrs and used for applying exchange bias field, has poor corrosion resistivity and is easily to be oxidezed, we proposed the reversed type spin valve structure, in which FeMn layr is deposited on substrate directly and Ni-Fe/Cu/Ni-Fe layrs was deposited on it. We succeeded to deposit FeMn layr with (111) orientation by deposited on Ni-Fe layr with well (111) orientation and ion-assist radiation. Ni-Fe/Cu/Ni-Fe layrs deposited on FeMn layr with (111) orientation possessed relatively well MR ratio and excellent field sensitivity. The exchange bias field of about 20 Oe was achieved in this type of multilayrs and it worked as spin valve device.
It seemed that the spin valve multilayrs deposited in this study has possibility to be applied as static memory device by using lithographic technology.
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