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1995 Fiscal Year Final Research Report Summary

Development of Spin Valve type of Static Memory Devices using GMR Effect

Research Project

Project/Area Number 06452213
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

NAOE Masahiko  Tokyo Institute of Technology, Faculty of Engineering, Professor, 工学部, 教授 (40016465)

Co-Investigator(Kenkyū-buntansha) MATSUSHITA Nobuhiro  Tokyo Institute of Technology, Faculty of Engineering, Research Associate, 工学部, 助手 (90229469)
NAKAGAWA Shigeki  Tokyo Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (60180246)
Project Period (FY) 1994 – 1995
KeywordsGMR effect / Spin valve / Ion irradiation / Control of Interface / Dual ion beam sputtering
Research Abstract

The giant magnetic multilayrs composed of Ni-Fe and Cu layrs whose thickness were from 10 to 35 A each were deposited on Fe buffer layr by using the dual ion beam sputtering apparatus. Assist ions were radiated to the interfaces between Ni-Fe and Cu layr and the change of giant magneto-resistance (GMR) effect on sub ion assist voltage V_<sub> from 0 to 350 V was investigated. Although the amplitude of magneto-resistivity (MR) ratio was slightly decreased, the field sensitivity of magneto-resistance was fairly improved by ion assist radiation and took the maximum value at V_<sub> of 160 V.
Since Fe-Mn layr, which is commonly deposited on top of the multilayrs and used for applying exchange bias field, has poor corrosion resistivity and is easily to be oxidezed, we proposed the reversed type spin valve structure, in which FeMn layr is deposited on substrate directly and Ni-Fe/Cu/Ni-Fe layrs was deposited on it. We succeeded to deposit FeMn layr with (111) orientation by deposited on Ni-Fe layr with well (111) orientation and ion-assist radiation. Ni-Fe/Cu/Ni-Fe layrs deposited on FeMn layr with (111) orientation possessed relatively well MR ratio and excellent field sensitivity. The exchange bias field of about 20 Oe was achieved in this type of multilayrs and it worked as spin valve device.
It seemed that the spin valve multilayrs deposited in this study has possibility to be applied as static memory device by using lithographic technology.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] Masahiro NAOE: "PREPARATION OF SOFT MAGNETIC Fe/To AND Fe : N/Ta : N MOLTILAYERED FILMS WITH LARGE MAGNETIZATION FOR INDUCTIVE RECORDIXG HEAD" Journal of Applied Physics. (発表予定). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ichihara: "FABRICATION OF PUAL COMPLINEN TARY TYPE OF THIN FILM RECORDING HEADS FOR PERPENDICOLAR MAGNETIC RECORDING" Journal of Applied Physics. (発表予定). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Shigeki NAKAGAWA: "Improvement of Soft Migretism of Fego Coio Sputtered Films by Addition of N and Ta" Journal of Applied Physics. (発表予定). (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yasuyoshi MIYAMOTO: "Enhancement in MR Field Sensitivity of [Ni_<81>Fe_<14>/Cu] Multlayers by Control of Crystallite Orieneation in Fe Buoffer layer" Journal of Magnetics Society of Japan. 18(Si). 409-412 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yasuyoshi MIYAMOTO: "Effect of Ion Bombardment and Bias Fielding for [Ni_<81>Fe_<19>/Cu] Multiayers with Giart Magnetoresistance Deposited by Dual Jar Bevn Sputeering" IEEE Trans.on Magn.31(6). 4103-4105 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 中川茂樹: "GMRスピンバルブ素子用多層膜の界面調整で特性制御" 日本応用磁気学会誌. 19(S2). 34-37 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Masahiko NAOE and Shigeki NAKAGAWA: "PREPARATION OF SOFT MAGNETIC Fe/Ta AND Fe : N/Ta : N MULTI-LAYERED FILMS WITH LARGE MAGNETIZATION FOR INDUCTIVE RECORDING HEAD" Journal of Applied Physics. (to be published in 1996).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Ichihara, S.Nakagawa, N.Matsushita and M.Naoe: "Theory, Fabrication and Testing of Dual Track Complimentary Type of Thin Film Recording Heads for Perpendicular Magnetic Recording" Journal of Applied Physics. (to be published in 1996).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shigeki NAKAGAWA,Yasuyoshi MIYAMOTO,Tohru YOSHITANI and Masahiko NAOE: "Improvement of Soft Magnetism of Fe90Co10 Sputtered Films by Addition of N and Ta" Journal of Applied Physics. (to be published in 1996).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yasuyoshi MIYAMOTO,Tohru YOSHITANI,Shigeki NAKAGAWA and Masahiko NAOE: "Effect of Ion Bombardment and Bias Fielding for [Ni_<81>Fe_<19>/Cu] Multilayrs with Giant Magnetoresistance Deposited by Dual Ion Beam Sputtering" IEEE Trans.on Magn.31 [6]. 4103-4105 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yasuyoshi MIYAMOTO,Shigeki NAKAGAWA and Masahiko NAOE: "Enhancement in MR field sensitivity of [Ni_<81>Fe_<19>/Cu] Multilayrs by control of crystallite orientation in Fe buffer layr" Journal of Magn.Soc.of Jpn.18 [S2]. 409-412 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Shigeki NAKAGAWA,Yasuyoshi MIYAMOTO,Tohru YOSHITANI and Masahiko NAOE: "Adjustment of Interface and Control of Characteristics of GMR and Spin Valve Devices" Journal of Magn.soc.of Jpn., 19 [S2], Proceedings of PMRS'95. 34-37 (1995)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1997-03-04  

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