1995 Fiscal Year Final Research Report Summary
Growth of rare earch iron garnet on semiconductor substrates for optical integrated circuits
| Project/Area Number |
06452228
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
NAITO Yoshiyuki Tokyo Inst.of Tech., Faculty of Eng., Professor, 工学部, 教授 (70016335)
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| Co-Investigator(Kenkyū-buntansha) |
YOKOI Hideki Tokyo Inst.of Tech., Faculty of Eng., Research Assoc., 工学部, 助手 (90251636)
ANZAI Hiroki Tokyo Inst.of Tech., Faculty of Eng., Research Assoc., 工学部, 助手 (80212661)
MIZUMOTO Tetsuya Tokyo Inst.of Tech., Faculty of Eng., Assoc.Professor, 工学部, 助教授 (00174045)
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| Project Period (FY) |
1994 – 1995
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| Keywords | hetero-epitaxy / rare-earth iron garnet / semiconductor laser / optical isolator / optical integrated circuit / Rutherford backscattering measurement / sputtering |
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| Research Abstract |
The purpose of this study is to make epitaxial growth of a magnetooptic crystal like a rare-earth iron garnet, (BiY)_3Fe_5O_<12>, on an InP substrate, which enables us to integrate an optical isolator with a semiconductor laser on a single substrate. The most important issue to be solved is large lattice mismatch between (BiY)_3Fe_5O_<12> and InP.To overcome this, we proposed to introduce a BaF_2buffer layr whose lattice constant is just a half of (BiY)_3Fe_5O_<12>.
The optimum growth condition of BaF_2 on a (111) InP substrate has been found for vacuum evaporation. A BaF_2 layr of high crystalline quality, i.e.the channeling minimum yield of 6% in the Rutherford backscattering and channeling measurement, was obtained at a low substrate temperature of 140ﾟC.Also, the dependence of BaF_2 lattice constant on the substrate temperature was investigated to find the optimum growth condition of (BiY)_3Fe_5O_<12> on it.
The growth condition of (BiY)_3Fe_5O_<12> was investigated to realize the lattice constant which is just twice of BaF_2. The optimum target composition was Bi_<0.25>Y_<2.75>Fe_<5.95>O_<12>. The lattice constant of grown layr can be adjusted by controlling the substrate temperature as well as a gas mixture ratio of Ar and O_2.
Although each elementary process mentioned above was successfully investigated, the final process of integrating (BiY)_3Fe_5O_<12> on a BaF_2 layr was unsuccessful. This can be mainly attributed to the difference of thermal expansion coefficient between (BiY)_3Fe_5O_<12> and BaF_2. The scheme to reduce this influence should be investigated to realize the epitaxial growth of (BiY)_3Fe_5O_<12> on an InP substrate.
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