1996 Fiscal Year Final Research Report Summary
Research on Logic Circuits Using Single-Electron Transistors
| Project/Area Number |
06452229
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Yokohama National University |
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Principal Investigator |
SUGAHARA Masanori Yokohama National University, Faculty of Engineering, Professor, 工学部, 教授 (40017900)
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| Co-Investigator(Kenkyū-buntansha) |
KANEDA Hisayoshi Yokohama National University, Faculty of Engineering, Research Assistant, 工学部, 助手 (30242382)
YOSHIKAWA Nobuyuki Yokohama National University, Faculty of Engineering, Assistant Professor, 工学部, 助教授 (70202398)
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| Project Period (FY) |
1994 – 1996
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| Keywords | Coulomb blockade / single electronics / SET effect / single electron transistor / single electron device / integrated circuit / single electron / logic circuit |
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| Research Abstract |
We have investigated the basic characteristics of logic circuits using single-electron transistors to consider a perspective of single-electron digital electronics, and proposed a new single electron logic circuit. We have also conducted the experimental study on small bridge junctions using granular thin films to examine the single-electron tunneling effect in very small tunnel junctions, and tried to realize a field effect devices based on the single-electron-tunneling effect.
Regarding the single-electron logic circuits, we have calculated static and dynamic characteristics of several types of single electron logic gates (resistively-coupled single-electron logic gates and capacitively-coupled single-electron logic gates) based on the semiclassical model using the Monte Carlo method. We have shown that the resistively coupled logic are advantageous in making large-scale digital circuits, because they have large voltage gain and high stability of the logic function against background fixed charges. We have also proposed a new complementary digital logic using resistively-coupled single-electron transistors and shown that it has larger voltage swing with better logic level stability than conventional single-electron logic gates.
On the other hand, we have fabricated nanoscale microbridges made of NbN granular thin films. We have observed a clear Coulomb blockade at 4.2K in current-voltage characteristics, and observed periodic conductance modulations induced by the gate electric field. The experimental results agree well with the numerical simulation based on the model of a two-dimensional array of single-electron-tunneling junctions. The estimation of the charge soliton length in the microbridges suggests that the microbridges have zero-dimensional properties.
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