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1996 Fiscal Year Final Research Report Summary

Research on Logic Circuits Using Single-Electron Transistors

Research Project

Project/Area Number 06452229
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionYokohama National University

Principal Investigator

SUGAHARA Masanori  Yokohama National University, Faculty of Engineering, Professor, 工学部, 教授 (40017900)

Co-Investigator(Kenkyū-buntansha) KANEDA Hisayoshi  Yokohama National University, Faculty of Engineering, Research Assistant, 工学部, 助手 (30242382)
YOSHIKAWA Nobuyuki  Yokohama National University, Faculty of Engineering, Assistant Professor, 工学部, 助教授 (70202398)
Project Period (FY) 1994 – 1996
KeywordsCoulomb blockade / single electronics / SET effect / single electron transistor / single electron device / integrated circuit / single electron / logic circuit
Research Abstract

We have investigated the basic characteristics of logic circuits using single-electron transistors to consider a perspective of single-electron digital electronics, and proposed a new single electron logic circuit. We have also conducted the experimental study on small bridge junctions using granular thin films to examine the single-electron tunneling effect in very small tunnel junctions, and tried to realize a field effect devices based on the single-electron-tunneling effect.
Regarding the single-electron logic circuits, we have calculated static and dynamic characteristics of several types of single electron logic gates (resistively-coupled single-electron logic gates and capacitively-coupled single-electron logic gates) based on the semiclassical model using the Monte Carlo method. We have shown that the resistively coupled logic are advantageous in making large-scale digital circuits, because they have large voltage gain and high stability of the logic function against background fixed charges. We have also proposed a new complementary digital logic using resistively-coupled single-electron transistors and shown that it has larger voltage swing with better logic level stability than conventional single-electron logic gates.
On the other hand, we have fabricated nanoscale microbridges made of NbN granular thin films. We have observed a clear Coulomb blockade at 4.2K in current-voltage characteristics, and observed periodic conductance modulations induced by the gate electric field. The experimental results agree well with the numerical simulation based on the model of a two-dimensional array of single-electron-tunneling junctions. The estimation of the charge soliton length in the microbridges suggests that the microbridges have zero-dimensional properties.

  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] N.Yoshikawa, H.Kimijima, N.Miura, M.Sugahara: "Single-Electron-Tunneling Effect in Nanoscale Granular Microbridges" Japanese Journal of Applied Physics. 36. 4161-4165 (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Yoshikawa, K.Fukushima and M.Sugahara: ""Influence of inhomogeneity on correlated single-electron tunneling in one-dimensional array of small tunnel junctions"" Physica B. 194-196. 1309-1310 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] X.Chen, N.Yoshikawa and M.Sugahara: ""Observation of Single-electron Charging Effect in NbN Submicron Bridges"" Physica B. 194-196. 1677-1678 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Yoshikawa, H.Ishibashi and M.Sugahara: ""Dynamic Characteristics of Inverter Circuits Using Single Electron Transistor"" Jpn.J.Appl.Phys. 34. 1332-1338 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Yoshikawa, N.Miura, X.Chen, K.Yokoyama and M.Sugahara: ""Electrical Field Effect in Highly Resistive NbN Microbridge"" IEEE Trans.on Applied Superconductivity. 5. 3090-3093 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Fukuzawa, H.Kimijima, N.Yoshikawa and M.Sugahara: ""Fabrication of Pd Nanostructures with Scanning Tunneling Microscope"" Jpn.J.Appl.Phys. 34. L1221-L1223 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Miura, N.Yoshikawa and M.Sugahara: ""Coulomb blockade and electrical field effect in nanoscale granular microbridges"" Appl.Phys.Lett.67. 3969-3971 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Su, N.Yoshikawa and M.Sugahara: ""Study of electrical conduction properties of NbN thin films using NbN/MgO/NbN double tunnel junctions"" Supercond.Sci.Technol.9. A152-A155 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Yoshikawa, Y.Jinguu, H.Ishibashi and M.Sugahara: ""Complementary Digital Logic Using Resistively Coupled Single Electron Transistor"" Jpn.J.Appl.Phys. 35. 1140-1145 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Yoshikawa, H.Kimijima, N.Miura and M.Sugahara: ""Single-Electron-Tunneling Effect in Nanoscale Granular Microbridge"" Jpn.J.Appl.Phys. 36. 4161-4165 (1997)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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