1995 Fiscal Year Final Research Report Summary
Low Temperature Heat Process of Reversible Shape Memory Alloy Thin Film on Si Water
| Project/Area Number |
06452230
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Yamaguchi University |
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Principal Investigator |
KURIBAYASHI Katsutoshi Faculty of Engineering Yamaguchi University Professor, 工学部, 教授 (30081251)
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| Co-Investigator(Kenkyū-buntansha) |
OGAWA Soichi Osaka Prefectural Industrial Research Institute Director, 材料技術部, 部長
SHIMIZU Seiji Faculty of Engineering Yamaguchi University Research Associate, 工学部, 助手 (00243626)
TANIGUCHI Takao Faculty of Engineering Yamaguchi University Associate Professor, 工学部, 助教授 (20093966)
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| Project Period (FY) |
1994 – 1995
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| Keywords | Micro actuator / TiNi alloy / Si substrate / Heat process / Jourle's heat / Shape memory alloy |
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| Research Abstract |
Reversible shape Memory alloy (RSMA) (TiNi alloy) Thin Film actuators have many advantages for micromachines, for example, the films have three functions ; 1) a frame of the arm, 2) a joint of the arm and 3) an actuator of the arm and the films could actuate the arm without frictions with low driving electrical voltage. To develop the micron sized actuator system with RSMA on silicon substrates, the spattering deposition technique for the thin films of TiNi alloy and the wet etching process were established. However, the same heat treatment as the method for bulk TiNi alloy was reported to be unsuccessful to crystallize the spattered amorphous thin films because the thin films were stripped off from the silicon substrates. In this study, to solve the problem, a heat treatment method by Joule's heat of electrical current direct through the TiNi alloy thin films on the silicon wafers was proposed. Reversible shape memory effect of TiNi thin films treated by direct Joule's heat and the conventional furnace was evaluated.
The results indicate that the heat treatment system using direct Joule's heat is effective for the crystallization of the sputtering deposited TiNi thin films.
This system has potential to realize not only the crystallization of TiNi thin films without stripping from silicon wafer but also shape memorizing heat treatment. TiNi film heat crystallyzed by the direct Joule's heat show better RSME than that by the conventional furnace.
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