1996 Fiscal Year Final Research Report Summary
Microstructured Magnetcoelectronic Devices Based on Spin Dependent Electron Scattering with Magnetic Multilayrs
| Project/Area Number |
06452231
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | KYUSHU UNIVERSITY |
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Principal Investigator |
MATSUYAMA Kimihide Kyushu Univ., Graduate School of Information Science and Electrical Engineering, Associate Professor, 大学院・システム情報科学研究科, 助教授 (80165919)
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| Co-Investigator(Kenkyū-buntansha) |
ASADA Hironori Kyushu Univ., Graduate School of Information Science and Electrical Engineering,, 大学院・システム情報科学研究科, 助手 (70201887)
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| Project Period (FY) |
1994 – 1996
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| Keywords | Magnetic Thin Film / Grant Magnetoresistance Effect / Spin Valve / Magnetic Tunneling Effect / Spin Dependent Electron Scattering |
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| Research Abstract |
Microstructured magnetoelectronic (ME) devices, composed of uncoupled magnetic multilayrs, have been fabricated with lithographic techniques. Fundamental device performance, based on the spin dependent electron transport, have been studied.
1. Sensitive spin valve effect in microstructured multilayrs. --- Highly sensitive magnetoresistance (MR) change of 6% for the external field of 20 Oe was attained in a microstructured strip pattern of Ni-Fe/Cu/Co and based multilayr, deposited with an electron beam evaporation Magnetostatic shape effects were clarified from the MR measurements of strip patterns with various pattern widths down to 0.4 mum, which were structured with a direct electron beam lithography and Ar ion milling.
2. Fabrication of corrent perpendicular to plane (CPP) ME devices. --- Microfabrication processes for CPP-ME devices with three dimentional electrodes been developed. MR change of 8 mOMEGA was observed at room temperature for a ferromagnetic tunnel junction of Co/Cu/CuO/Co, which tunnel barrier CuO was formed with in-situ rf plasma oxidation. MR effects were also observed in CPP-ME devices with a-Si or a-Ge as nonmagnetic layrs, which suggest the spin dependent electron transport in amorphous semiconductors.
3. Development of magnetic random access memory (M-RAM). ---A M-RAM memory cell composed of evaporated Ni-Fe/Co/Cu/Co with lateral size of 2*5 mum^2 and an overlaid conductor pattern was designed and fabricated. High speed bistable bit state change (write operation) was performed with conductor current of 20 ns pulse width, and electrically detected by MR measurement (read operation).
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