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1995 Fiscal Year Final Research Report Summary

Developmental Study on Low-tempeature growth technique of crystalline Si by a chemical process of silane with fluorine.

Research Project

Project/Area Number 06505001
Research Category

Grant-in-Aid for Developmental Scientific Research (A)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo Institute of Technology

Principal Investigator

HANNA Jun-ichi  Tokyo Institute of Technology, Professor, 工学部, 教授 (00114885)

Co-Investigator(Kenkyū-buntansha) OKAYASU Yoshinori  Tonen Corp., Research stuff, 総合研究所, 研究員
KUMAGAYA Keiji  Tonen Corp., Group head, 総合研究所, グループヘッド
HONMA Kenji  Himeji Scientific University, Associate professor, 理学部, 助教授 (30150288)
Project Period (FY) 1994 – 1995
KeywordsCVD / silane / reactive gas flow / fluorine / a-Si / poly-Si / low-temperature crystal growth
Research Abstract

In deposition of Si thin films by reactive CVD with silane and fluorine, the resulting reactive gas flow from mixing these raw materials plays a major role for the growth. In the present study, we designed a vertical type of reactor with a nozzle of 70mm phi, of which volume was 351, and studied the film growth in order to characterize this reactive gas flow and to establish how to control it in terms of film growth, leading to a guide for a design of the reactor. The major efforts were devoted to preparation of a-Si thin film in different growth parameters such as gas a flow ratio, a reaction pressure, a pumping rate for the gas and its residence and so on. The films were evaluated in terms of uniformity, growth rate, film structure and its composition, which gives valuable information of the reactive flow. As a result, we found that there were different characteristics of reactive gas flow leading to different growth modes of films and that a resulting higher products from the secondary reactions degraded the low-temperature crystallization, which was solved by controlling the flux of the gas flow on the nozzle. In addition to this, we investigated a dynamics of reactive flow of transition metals with hydrocarbons in a discharge flow as a model of reactive flow and characterized the reactive flow by identifying the reactive products and determining their rate constants.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] Jun-ici Hanna: "Deposition of Si Thin Films by Reactive CVD" Mat.Res.Soc.Proc.,. 377. 105-110 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 半那 純一: "半導体大面積薄膜の新しい作製法;反応性化学気相成長法" 応用物理. 65. 382-386 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Jun-ich Hanna 他2名: "Direct Fabnication of SiGe crystallites on glass substrate" J.Non-cryst.Solids. 198-200. 879-882 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tomoaki Kaneda and Jun-ich Hanna: "Effect of dilvent on deposition of Si thinfilms by fluoro-oxidation of Si ane" Appl.Phys.Lett.,. (投稿予定). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Senba 他2名: "Kinetics of Ti(a^3F,a^5F) and V(a^4F,D^^6)Def etion by Simple Hydrocarbons" J.Phy.Chem.,. 99. 13992-13999 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R.Matsui 他2名: "Kinetics of depletion of Co(b^4F) and Co(a^2F) atoms by O_2" Chem.Phys.Lett.,. 250. 560-566 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Jun-ichi Hanna: "Deposition of Si Thin Films by Reactive CVD" Mat.Res.Soc.Proc.377. 105-110 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Jun-ichi Hanna, Takayuki, Ohuchi, and Masaji Yamamoto: "Direct Fabrication of SiGe crystallites on glass substrate" J.Non-cryst.Solids. 198-200. 879-882 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Ryuta Iijima and Jun-ichi Hanna: J.Appl.Phys.(to be submitted). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tomoaki Kaneda, ryuta Iijima, and Jun-ichi Hanna: APL. (to be submitted). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Honma and D.E.Clemmer: "The importance of electron transfer mehanism in reaction of neutral transition metal atoms" Laser Chem.Vol.15. 209-220 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Honma: "Kinetics of Depletion of Electronically Excited Ti Atom by CH_4, C_2H_2, C_2H_4, and C_2H_6" J.Chinese Chem.Soc.Vol.42. 371-379 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Senba, R.Matsui, and K.Honma: "Kinetics of Ti (a^3F,a^5F) and V (a^4F,a^6D) Depletion by Simple Hydrocarbons" J.Phys.Chem.Vol.99. 13992-13999 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R.Matsui, K.Senba, and K.Honma: "Kinetics of depletion of Co (b^4F) and Co (a^2F) atoms by O_2" Chem.Phys.Lett.Vol.250. 560-566 (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-16  

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