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1995 Fiscal Year Final Research Report Summary

Development of a Light Detection System Combined with a Transmission Electron Microscope

Research Project

Project/Area Number 06555004
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo Institute of Technology

Principal Investigator

YAMAMOTO Naoki  Tokyo Institute of Technology, Phys.Dept., Associate Professor, 理学部, 助教授 (90108184)

Co-Investigator(Kenkyū-buntansha) SHIMIZU Takehiko  ATAGO BUSSAN Co.Ltd, System Development Devision, the Chief of the Devision, システム開発部, 課長
Project Period (FY) 1994 – 1995
KeywordsElectron Microscope / Cherenkov Radiation / Transition Radiation / Cathodoluminescence / Thin Films
Research Abstract

The purpose of this research is to develop a light detection system combined with a transmission electon microscope which has a capability of converged electron beam of a nanometer size. A spectrum of light emitted from a localized region can be obtained by using a monochrometer, a photomultiplier tube and a photon counter and is displayd by a mini-computer. The computer also controls the electron beam through a TEM scanning system and a monochromatic photon image can be obtained in a monitor. The spatial resolution of the photon image is less than 0.1mum.
This system has been applied to the two subjects ; the study of Cherenkov and transition radiation from thin films, and that of cathodoluminescence. The main results are as follows.
1) Cherenkov and transition radiation : Emission from a mica film is contributed mainly from Cherenkov radiation in the forward direction, while transition radiation is also considerable in the backward direction, which gives set of peaks in a spectrum due … More to intereference effect. Transition radiation is dominant in emissions from semiconductor and metal films. In the case of a semiconductor film some peaks correspond to maximum of the dielectric function, i.e., the interband transition.The backward emission spectrum from a thin silver filn involves a characteristic peak due to a radiative surface plasmon mode (Ferrell mode). The monochromatic photon images reveal the relation between the characteristic peaks and structural features such as lattice defects and surface morphology.
2) Cathodoluminescence of ZnS MBE grown films on GaAs substrates : The luminescence peaks associated with bound excitons and the conduction-acceptor transition were observed to appear in the CL spectra, and the correlation between spatial distribution of the luminescences and lattice deffects such as stucking fault were studied.
3) Cathodoluminescence of porous silicon : A broad luminescence peak around a wavelength of 420 nm was observed to appear together with a red emission peak. CL images of a cross-sectional sample revealed different spatial distributions of those CL emission regions. It was found from the annealing experiment and the IR absorption measurment that the 420 nm peak is related to Si-H compounds formed on the Si surface. Less

  • Research Products

    (13 results)

All Other

All Publications (13 results)

  • [Publications] 山本直紀: "「遷移放射-表面物性研究の新しいプローブをめざして-」" 固体物理. 29. 1-13 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Mitsui: "Cathodoluminescence and Electron Microscope Observation of Porous Silicon"" Jpn.J.Appl.Phys.33. L342-L344 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.YAMAMOTO: "Imaging of Cherenkov and Transition Radiation from Thin Films and Particles"" Scanning Microscopy. 9. 669-676 (1995)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.YAMAMOTO: "Imaging of Transition radiation from Thin Films on a Silicon Substrate using a Light Detection System combined with TEM" J.Electron Microsc.45. 64-71 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.ITO: "Cathodoluminescence Imaging of n-type Porous Silicon" Jpn.J.Appl.Phys.

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.MITSUI,N.YAMAMOTO,K.TAKEMOTO and O.NITTONO: ""Cathodoluminescence and Electron Microscope Observation of Porous Silicon"" Jpn.J.Appl.Phys.33. L342-L344 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.SUGIYAMA,A.TODA and N.YAMAMOTO: ""Detection of Cherenkov and Transition Radiation in TEM"" Proc.Inter.Cong.Electron Microsc.Vol.1. 833-834 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.YAMAMOTO and A.TODA: ""Detection of Cherenkov and Transition Radiation from Thin Films and Small Particles in TEM"" Proc.2nd NIRIM Inter.Symp.Adv.Mat.(1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.YAMAMOTO and A.TODA: ""Imaging of Cherenkov and Transition Radiation from Thin Films and Particles"" Scanning Microscopy. 9. 669-676 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Mitsui, N.YAMAMOTO,T.Tadokoro and S.Ohta: ""Correlation Between Cathodoluminescence and Structural Defects in ZnS/GaAs (100) and ZnSe/GaAs (100) Studied by Transmission Electron Microscopy"" Proc.9th Intern. Conf.Solid Surface. (1995, Yokohama).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.YAMAMOTO,A.TODA and K.ARAYA: ""Imaging of Transition radiation from Thin Films on a Silicon Substrate using a Light Detection System combined with TEM"" J.Electron Microsc. 45. 64-71 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.ITO,N.YAMAMOTO,K.TAKEMOTO and O.NITTONO: ""Cathodoluminescence Imaging of n-type Porous Silicon"" Jpn.J.Appl.Phys.(to be published).

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Mitsui, N.YAMAMOTO,T.Tadokoro and S.Ohta: ""Luminescence Distribution in ZnS-MBE Grown Films Studied by Cathodoluminescence Imaging Technique Combined with TEM"" 1st Intern. Union Microbeam Analysis Soc., Sydney. (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1997-03-04  

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