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1996 Fiscal Year Final Research Report Summary

Fabrication of high-performance and long lifetime GaAs-based laser on Si substrate

Research Project

Project/Area Number 06555013
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section試験
Research Field Applied optics/Quantum optical engineering
Research InstitutionNagoya Institute of Technology

Principal Investigator

UMENO Masayoshi  Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Professor, 工学部, 教授 (90023077)

Co-Investigator(Kenkyū-buntansha) MATSUMOTO Koh  Nippon Sanso Corporation, Tsukuba Laboratries, Manager, つくば研究所, 室長
EGAWA Takashi  Nagoya Institute of Technology, Research Center for Micro-Structure Devices, Ass, 極微構造デバイス研究センター, 助教授 (00232934)
JIMBO Takashi  Nagoya Institute of Technology, Research Center for Micro-Structure Devices, Pro, 極微構造デバイス研究センター, 教授 (80093087)
Project Period (FY) 1994 – 1996
KeywordsDroplet epitaxy / Metalorganic chemical vapor deposition / Island / Lifetest / Laser on Si / Dislocation / Self-formed / Quantum well structure
Research Abstract

We have demonstrated 300 K lasing oscillation of the self-formed AlGaAs/GaAs laser diode on Si grown by metalorganic chemical vapor deposition for the first time. The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on Si substrates showed the threshold current of 260 mA,the threshold current density of 5.4 kA/cm^2 and the lasing wavelength of 791 nm with the FWHM of 2.8 nm under pulsed condition at 300 K.The self-formed GaAs islands on Si grown by the droplet epitaxy exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited the improved reliability due to the reduction of the dislocation number in the active region.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] T. Egawa et al.: "Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition" Appl. Phys. Lett.69・6. 830-832 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Egawa et al.: "Stimulated emission from current injected InGaN/AlGaN surface emitting diode with Al reflector at room temperature" Electronics Lett.32・5. 486-487 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. Hasegawa et al.: "AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs islands active region grown by droplet epitaxy" Appl. Phys. Lett.68・4. 523-525 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. Murata et al.: "GaAs-based vertical-cavity surface-emitting laser on Si substrate by metalorganic chemical vapor deposition" Jpn. J. Appl. Phys.35・12B. L1631-L1633 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y. Hasegawa et al.: "Suppression of 〈100〉 dark-line defect growth in AlGaAs/InGaAs single quantum well lasers grown on Si substrates" Jpn. J. Appl. Phys.35・11. 5637-5641 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Egawa et al.: "First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy" Technical digest of International Electron Devices Meeting. 413-416 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Egawa et al.: "Optical degradati on of InGaN/AlGaN light-emitting diodeon sapphire substrate grown by metalorganic chemical vapor deposition" Appl.Phys.Lett.Vol.69, No.6. 830-832 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Egawa et al.: "Stimulated emission from current injected InGaN/AlGaN surface emitting diode with Al reflector at room temperature" Electronics Lett.Vol.32, No.5. 486-487 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Hasegawa et al.: "AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs island sactive region grown by droplet epitaxy" Appl.Phys.Lett.Vol.68, No.4. 523-525 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Hasegawa et al.: "Suppression of <100> dark-line defect growth in AlGaAs/InGaAs single quantum well lasers grown on Si substrates" Jpn.J.Appl.Phys.Vol.35, No.12B. L1631-L1633 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Murata et al.: "GaAs-based vertical-cavity surface-emitting laser on Si substrate by metalorganic chemical vapor deposition" Jpn.J.Appl.Phys.Vol.35, No.11. 5637-5641 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Egawa et al.: "First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy" Technical digest of International Electron Devices Meeting. 413-416 (1996)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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