1996 Fiscal Year Final Research Report Summary
Fabrication of high-performance and long lifetime GaAs-based laser on Si substrate
| Project/Area Number |
06555013
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 試験 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
UMENO Masayoshi Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Professor, 工学部, 教授 (90023077)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUMOTO Koh Nippon Sanso Corporation, Tsukuba Laboratries, Manager, つくば研究所, 室長
EGAWA Takashi Nagoya Institute of Technology, Research Center for Micro-Structure Devices, Ass, 極微構造デバイス研究センター, 助教授 (00232934)
JIMBO Takashi Nagoya Institute of Technology, Research Center for Micro-Structure Devices, Pro, 極微構造デバイス研究センター, 教授 (80093087)
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| Project Period (FY) |
1994 – 1996
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| Keywords | Droplet epitaxy / Metalorganic chemical vapor deposition / Island / Lifetest / Laser on Si / Dislocation / Self-formed / Quantum well structure |
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| Research Abstract |
We have demonstrated 300 K lasing oscillation of the self-formed AlGaAs/GaAs laser diode on Si grown by metalorganic chemical vapor deposition for the first time. The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on Si substrates showed the threshold current of 260 mA,the threshold current density of 5.4 kA/cm^2 and the lasing wavelength of 791 nm with the FWHM of 2.8 nm under pulsed condition at 300 K.The self-formed GaAs islands on Si grown by the droplet epitaxy exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited the improved reliability due to the reduction of the dislocation number in the active region.
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