1995 Fiscal Year Final Research Report Summary
Plasma Enhaced Chemical Vapor Deposition of Hydrogen-free SiO_2 using tera-isocyanate-silane
| Project/Area Number |
06555091
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
SUGIURA Osamu Tokyo Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (10187643)
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| Project Period (FY) |
1994 – 1995
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| Keywords | Plasma Enhaced CVD / Tetra-isocyanate-silane / SiO_2 / TICS / PECVD |
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| Research Abstract |
Deposition of silicon dioxide by plasma-enhanced chemical vapor deposition (PECVD) technique using tetra-isocyanate-silane (Si (NCO) _4 : TICS) and oxygen for interlayr dielectric film application is proposed. This material system has an feature of no possibility of formation of H_2O molecules nor OH radicals during deposition. If deposited films were dense enough to prevent water penetration into the films, the films have a big advantage for solving the problem of poisoned via holes and threshold voltage variation because these were caused by H_2Oor OH radicals in SiO_2 interlayr. Film properties strongly depended on the deposition gas composition. The film which was deposited under an oxygen-rich condition and high temperature (300ﾟC) was "hydrogen-free SiO_2", which means that the films does not contaion water nor OH redicals. The film density, refractive index, resistivity, and dielectric constant were 2.3g/cm^3,1.46,5*10^<14>OMEGAcm, and 3.6, respectively. The etching rate by buffered HF was 330nm/min. The film quality degraded with decreasing deposition temperature, however, it can be improved by annealing at 300ﾟC after deposition. Interface trap density and fixed charge density were about 8*10^<10>cm^<-2>eV^<-1> and 2*10^<11>cm^<-2> respectively. Fluorine doping were also examined. Refractive index and dielectric constant were reduced by 8% and 3%, respectively.
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