1995 Fiscal Year Final Research Report Summary
Development of generation method of microwave plasmas with an annular slot antenna for large diameter wafer etching
| Project/Area Number |
06558065
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
プラズマ理工学
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| Research Institution | Saga University |
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Principal Investigator |
FUJITA Hiroharu Faculty of Science and Engineering, professor Saga University, 理工学部, 教授 (10038086)
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| Co-Investigator(Kenkyū-buntansha) |
IKUSHIMA Takayuki Mitsubishi Electric Corporation, 装置技術部ウエハ装置技術課
OHTSU Yasunori Faculty of Science and Engineering, research assistant Saga University, 理工学部, 助手 (50233169)
TOCHITANI Gen Faculty of Science and Engineering, lecture Saga University, 理工学部, 講師 (00264143)
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| Project Period (FY) |
1994 – 1995
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| Keywords | large diameter plasma / high density plasma / uniform plasma / ring-shaped permanent magnet / annular slot antenna / negative ion |
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| Research Abstract |
A new generation method for a large diameter and uniform microwave plasma is proposed without magnetic coils. An annular slot antenna and two ring-shaped permanent magnets are used for the generation of high density plasma by electron cyclotron resonance in the circumference of a chamber with the plasma confinement and diffusing to the central region. We can summarize them as follows ;
(1) A uniform microwave plasma of 30cm in diameter was success-fully produced in both Ar and SF_6 gases, and the electron density of about 3x10^<10>cm^<-3> was obtained. The uniformity of electron density within 5% over 30cm diameter was obtained, while that of etch rate within 2.5% was observed at the distance where electron density reach the best uniformity. It was found that this plasma source was successfully useful for a practical etching.
(2) Results from etching profile of poly-Si pattern suggested that the etching was driven primarily by radicals.
(3) As the bias voltage applied to the substrate shifted to the negative direction, the etching rates increased up to about 3 times with the keeping uniformity. The etching rates at a bias voltage of -150V arrived to about 400nm/min which seems to be available for a fabrication process of semiconductor devices.
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