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1995 Fiscal Year Final Research Report Summary

De Haas-van Alphen Effect in Rare-Earth Gallium compounds.

Research Project

Project/Area Number 06640473
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 固体物性Ⅱ(磁性・金属・低温)
Research InstitutionNagoya Institute of Technology

Principal Investigator

SAKAMOTO Isao  Nagoya Institute of Technology, Department of Engineering, Associate Professor, 工学部, 助教授 (80094267)

Co-Investigator(Kenkyū-buntansha) OHARA Shigeo  Nagoya Institute of Technology, Department of Engineering, Assistant, 工学部, 助手 (60262953)
Project Period (FY) 1994 – 1995
Keywordsde Haas-van Alphen effect / Fermi Surface / Rare-earth compounds / Brillouin zone / 4-f electrons / itinerant and localized electrons
Research Abstract

We have improved the apparatus for measuring de Haas van Alphen (dHvA) effect to obtain the dHvA Signal at temperature as low as 0.3K in magnetic fields of 12T with the aid of Grant-in-Aid of Scientific Research. Using this system we have measured the HvA effect of the rare-earth (RE) gallium compounds of PrGa2, SmGa, GdGa2 and LaGa2. The LaGa2 is known as the reference material of REGa2 compounds. The measurements of dHvA effects were also made on the ytterbium compounds YbSn3 and YbZn11 and the uranium compound UGa2. the gross features of the results are as follows : (1) The angular dependences of dHvA frequencies of PrGa2 and GdGa2 are very similar to that of LaGa2. There are however some branches in them that are not corresponding to that of LaGa2. This shows that the magnetic Brillouin zones formed in antiferromagnetic states of PrGa2 and GdGa2 affect the band structures of these compounds and create the new Fermi surfaces in these compounds. (2) The results in SmGa2 are very different to that of LaGa2 : the multiple connection of Fermi surface in the [001] direction observed in LaGa2 is completely broken. This indicates that 4f2+level just above the Fermi level mixes with the s, p and d bands and the valence of Sm ion is partly fluctuated between 2+ and 3+. (3) The origin of the modulated magnetic structure incommensurate with the lattice observed in PrGa2 and CeGa2 is found to be due to the nesting effect of the Fermi surface. The wave numbers of the modulated magnetic structures agree with the nesting vector of the nesting effect.
We continue to investigate the dHvA effect of other RE compounds as well as uranium compound to understand the effect of 4f and 5f electrons on magnetic and heavy electron properties.

  • Research Products

    (13 results)

All Other

All Publications (13 results)

  • [Publications] I.Sakamoto: "De Haas-van Alphen effect and magnetoresistance in YbSn_3" Physica B. 230(to be published). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Sakamoto: "De Haas-van Alphen effect in YbSn_3" Czech.J.Phys.46. 2041-2042 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Sakamoto: "Magnetic and X-ray diffraction studies on dextran iron-oxide magnetic fluid" Phys.Colloq.(to be published). (1997)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Ohara: "Magnetic properties and de Haas-van Alphen effect of GbGa_2" Physica B. 223. 379-381 (1996)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Sakamoto: "de Haas-van Alphen effect in LaGa_2" J.Phys.Soc.Jpn.63. 3775-3780 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Sakamoto: "De Haas-van Alphen effect and magnetic properties og antiferromagnetic SmGa_2 and PrGa_2" Physica B. 194. 1175-1176 (1994)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] I.Sakamoto: "De Haas-van Alphen effect and magnetoresistance in YbSn3" Physica B. (to be published). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Sakamoto: "De Haas-van Alphen effect in YbSn3" Czech.J.Phys. 46-suppl. 2041 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Sakamoto: "Magnetic and X-ray diffraction studies on dextran iron-oxide magnetic fluid" Phys.Colloq. (to be published). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Ohara: "Magnetic properties and de Haas-van Alphen effect of GdGa2" Physica B. 223. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y Ando: "Study of HfN films deposited by reactive RF-sputtering" Proc.IMMM.461 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Sakamoto: "De Haas-van Alphen Effect in LaGa2" J.Phys.Soc.Jpn.63. 3775 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] I.Sakamoto: "De Haas-van Alphen effect and magnetic properties of antiferromagnetic SmGa2 and PrGa2" Physica B. 194. 1175 (1994)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 1999-03-09  

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