1995 Fiscal Year Final Research Report Summary
Low Temperature and Large-Area Deposition of 3C-SiC Films on Si by AC Plasma-Assisted CVD.
| Project/Area Number |
06650015
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Aichi University of Education |
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Principal Investigator |
SHIMIZU Hideki Aichi Univ. of Education, Dept. of Tech., Associate Professor., 教育学部, 助教授 (70126936)
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| Project Period (FY) |
1994 – 1995
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| Keywords | Plasma-Assisted CVD / 3C-SiC / Hetero-epitaxisyal / Low Temperature Deposition / Large-Area Deposition / Plasma Processing / Optical Emission Spectroscopy / Plasma Temperature |
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| Research Abstract |
Large area depositions of 3C-SiC films on Si have been investigated by modified plasma electrode. To make the plasma wider, the pressure was reduced from 170 Torr of the previous pressure to 100 Torr and plasma electrodes were modified.
SiC thin films were deposited on 60x40 mm^2 Si (100) wafer by AC plasma-assisted CVD technique. Carbonization layrs formed at the substrate of 900-1000ﾟC were monocrystalline SiC films with smooth and flat surfaces except of substrate edges. Nearly monocrystalline films of grown layrs were obtained at the substrate temperature of 950ﾟC.The grown layr had a tendency to include a polycrystalline phase and SiC spherical particles with increasing the flow rate of SiH_4. When making a distance of the SiH_4 nozzle and the substrate wider, The grown layrs were relatively smooth and flat without SiC spherical particles. However they were polycrystalline SiC films.
The excess supply of Si sources onto the growing surface make growth layr polycrystalline phase. In other words, it is suggested that perfect monocrystalline SiC growth layr can be formed at low substrate temperature by supplying the SiH_4 gas and DC bias adequately.
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