Thin film electroluminescent devices with blue-emission prepared using an oxide phosphor emitting layr operaed by low-voltage driving

1995 Fiscal Year Final Research Report Summary

• Project/Area Number: 06650061
• Research Category: Grant-in-Aid for General Scientific Research (C)
• Allocation Type: Single-year Grants
• Research Field: Applied optics/Quantum optical engineering
• Research Institution: KANAZAWA INSTITUTE OF TECHNOLOGY
• Principal Investigator: TAKATA Shinzo KANAZAWA INSTITUTE OF TECHNOLOGY, DEPARTMENT OF ELECTRICAL ENGINEERING, PROFESSOR, 工学部, 教授 (70064467)
• Co-Investigator(Kenkyū-buntansha): MINAMI Tadatsugu KANAZAWA INSTITUTE OF TECHNOLOGY, DEPARTMENT OF ELECTRICAL ENGINEERING, PROFESSO, 工学部, 教授 (70113032)
• Project Period (FY): 1994 – 1995
• Keywords: Thin Film Electroluminescence / Oxide phosphor / Ceramic EL Devices / Blue-Light Emission EL Devices / Zinc-silicate / Zinc-Gallate

Research Abstract

Purpose and results of this project are shown as follows.
It will be carried out that thin film electroluminescent devices using an oxide-phosphor, Zn_2SiO_4 : Ti or ZnGa_2O_4, emitting layr prepared on a BaTiO_3 ceramic insulating layr as well as substrate emitts a high luminance of blue light from the low -drivig voltage.
1) It is possible that various dopants can be introduced into the same host materials of Zn_2SiO_4 or ZnGa_2O_4.
2) These hosts are promising materials as the blue, green or red emiting layr of EL devices.
3) As-deposited Zn_2SiO_4 : Ti emitting layr prepared by magnetron sputtering do not emitts because the layr may include non-rediative centers. Consequently, the layr was needed post-annealing at high temperature.
4) It is difficult to prepare Zn_2SiO_4 host with a excellent crystallinity by chemical vapor deposition because SiO_2 always become amorphous in the ZnO-SiO_2. But CVD grown, for example, Zn_2SiO_4 : Mn emitts green lieht even EL devices with as-deposited emitting layr.