1995 Fiscal Year Final Research Report Summary
PREPARATION OF SILICON BASED WIDEGAP SEMICONDUCTOR FILM FROM ORGANO-SILICON MATERIAL
| Project/Area Number |
06650363
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | SHIZUOKA UNIVERSITY |
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Principal Investigator |
HATANAKA Yoshinori SHIZUOKA UNIVERSITY RESEARCH INSTITUTE OF ELECTRONICS PROFESSOR, 電子工学研究所, 教授 (60006278)
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| Co-Investigator(Kenkyū-buntansha) |
SUNIL Wickramanayaka SHIZUOKA UNIVERSITY RESEARCH INSTITUTE OF ELECTRONICS RESEARCH ASSOCIATE, 電子工学研究所, 助手 (50252169)
NAKAMURA Takato SHIZUOKA UNIVERSITY FACULTY OF ENGINEERING ASSOCIATE PROF., 工学部, 助教授 (10022287)
NAKANISHI Yoichiro SHIZUOKA UNIVERSITY RESEACH INSTITUE OF ELECTRONICS ASSOCIATE PROF., 電子工学研究所, 助教授 (00022137)
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| Project Period (FY) |
1994 – 1995
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| Keywords | Organo-silicon / Rimote plasma / Silicon carbide film / Hexamethyldisilane / SiO2 film / hydrogen radical reaction / Plasma CVD / TEOS |
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| Research Abstract |
The remote hydrogen plasma chemical vapor depositions (RHPCVDs) using organo-silicon as source compounds have been examined in terms of the mechanism of the activation steps and film formation. The deposition experiments performed for different configurations of the aftergrow tube (straight, with a light trap, and a radical trap) prove how the source materials are effective for the film formation. In the SiC film formation, it is shown that hydrogen radicals act on the Si-Si bond of the source material. In SiO_2 film formation, hydrogen and helium can not be effective for the SiO_2 formation, but argon, nitrogen and oxygen plasma radicals are effective for dissociationof tetraethoxysilane (TEOS). Furthermore, it is found that highly excited oxygen radical O(^1D) is valuable for the preparation of a high quality film without H_2O.Deposition of wide bandgap film includcing nitrogen was studied by a remote plasma method by using hexamethyldisilazane (HMDZ). Nitrogen plasma was used to intiate the deposition reaction by decomposing the organosilicon monomer. All the films obtained are optically transparent and have a band gap around 4eV.Electrical resistivities of the films lie in the region of 10^<14>-10^<15> ohm cm.
In future, these research of CVD using organo-silicon and organo-metal are more required for the preparation of wide gap insulating film.
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