Study on the Carrier Recombination at the Facet of Strained Quantum Well Layr

1995 Fiscal Year Final Research Report Summary

• Project/Area Number: 06650370
• Research Category: Grant-in-Aid for General Scientific Research (C)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: SEIKEI UNIVERSITY
• Principal Investigator: UEHARA Shingo Seikei University, Engineering, Frofessor, 工学部, 教授 (40232780)
• Project Period (FY): 1994 – 1995
• Keywords: Strained Quantum Well / Optical Short Pluse / Carrier Life Time / Interference

Research Abstract

Strained quantum well layrs have attracted wide attention because of their possibility for new functions and properties. Basic properties such as relaibility are left to be studied because they are new comming lattice mimatched strained crystals. The final purpose of this study is to evaluate the carrier lifetime of the strained quantum well and clarify the influence of cleaved facet on the reliability. To get the purpose, we set up two objectives to pursue : The first one is to realize a method to measure the carrier life time of the quantum well in sub-nanosecond range. The second one is to evaluate the carrier lifetime for various strained layrs. In the process of the first step study, we were able to get optical pulse with output power as high as 600 mW from the strained layr InGaAs/GaAs laser diode. And we also developed a new method to monitor carrier density in semiconductor waveguide by applying an interference method incorporating plasma effect. By combining these results we were able to get the basic performance of sub nanosecond carrier lifetime measuring system. Owing to a variety of problems to be solved in the first step, we were unable to make any study on the second step which we are going to study form now on. The measuring scheme we realized in this study has possibility of carrier lifetime measurements in the sub-picosecond range and seems to find a wide area of application in the future.